SI2318DS-T1-E3 Vishay, SI2318DS-T1-E3 Datasheet

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SI2318DS-T1-E3

Manufacturer Part Number
SI2318DS-T1-E3
Description
MOSFET N-CH 40V 3A SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI2318DS-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 3.9A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 20V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.045 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.9A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
58mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2318DS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2318DS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
126 763
Part Number:
SI2318DS-T1-E3
Manufacturer:
Maxim
Quantity:
40
Part Number:
SI2318DS-T1-E3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
SI2318DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2318DS-T1-E3
Quantity:
90 000
Part Number:
SI2318DS-T1-E3/C8
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature
Document Number: 72322
S09-0130-Rev. B, 02-Feb-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
40
(V)
a, b
0.058 at V
0.045 at V
b
R
DS(on)
J
= 150 °C)
GS
a
GS
Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free)
(Ω)
= 4.5 V
= 10 V
N-Channel 40-V (D-S) MOSFET
a, b
G
S
a, b
1
2
Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
A
I
= 25 °C, unless otherwise noted
*Marking Code
D
3.9
3.5
Si2318DS( C8)*
Steady State
Steady State
(SOT-23)
(A)
Top View
T
T
T
T
TO-236
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
D
FEATURES
APPLICATIONS
• Stepper Motors
• Load Switch
Symbol
Symbol
T
R
R
J
Halogen-free According to IEC 61249-2-21
Available
TrenchFET
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
1.25
120
5 s
3.9
3.1
0.8
75
40
- 55 to 150
± 20
0.8
40
16
Steady State
Maximum
0.75
0.48
100
166
3.0
2.4
50
Vishay Siliconix
Si2318DS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI2318DS-T1-E3 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.045 0.058 4 Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2318DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Gate Charge 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72322 S09-0130-Rev. B, 02-Feb- °C J 0.8 1.0 1.2 1.4 Si2318DS Vishay Siliconix 800 C 600 iss 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 3 1.7 1.4 1 ...

Page 4

... Si2318DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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