IRFM120ATF Fairchild Semiconductor, IRFM120ATF Datasheet

IRFM120ATF

Manufacturer Part Number

IRFM120ATF

Description

MOSFET N-CH 100V 2.3A SOT-223

Manufacturer

Fairchild Semiconductor

Datasheet

1.IRFM120ATF.pdf (7 pages)

Specifications of IRFM120ATF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

200 mOhm @ 1.15A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

2.3A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

22nC @ 10V

Input Capacitance (ciss) @ Vds

480pF @ 25V

Power - Max

2.4W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.2 Ohms

Forward Transconductance Gfs (max / Min)

5.7 S

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.3 A

Power Dissipation

2.4 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

28 ns

Minimum Operating Temperature

- 55 C

Rise Time

14 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRFM120ATFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFM120ATF

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFM120ATF

Company:

H&T Electronics

Part Number:

IRFM120ATF

Quantity:

3 900

Current page: 1 of 7
Download datasheet (270Kb)

Advanced Power MOSFET

FEATURES

! Avalanche Rugged Technology

! Rugged Gate Oxide Technology

! Lower Input Capacitance

! Improved Gate Charge

! Extended Safe Operating Area

! Lower Leakage Current : 10 #A (Max.) @ V

! Lower R

Absolute Maximum Ratings

Thermal Resistance

When mounted on the minimum pad size recommended (PCB Mount).

Symbol

dv/dt

, T

$JA

DSS

STG

DS(ON)

Drain-to-Source Voltage

Continuous Drain Current (T

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

: 0.155 ! (Typ.)

IEEE802.3af Compatible

Junction-to-Ambient

Characteristic

=25%)

=70%)

= 100V

(

Typ.

- 55 to +150

0.019

1.84

"20

0.24

Value

300

100

123

2.3

6.5

2.4

1. Gate 2. Drain 3. Source

IRFM120A

SOT-223

DS(on)

= 2.3 A

DSS

Max.

= 0.2 !

= 100 V

Units

%/W

W/%

V/ns

Rev. C

Related parts for IRFM120ATF

IRFM120ATF Summary of contents

Page 1

Advanced Power MOSFET IEEE802.3af Compatible FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max Lower ...

Page 2

IRFM120A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS .BV/.T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I DSS Drain-to-Source Leakage Current Static Drain-Source R DS(on) ...

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IRFM120ATF Fairchild Semiconductor, IRFM120ATF Datasheet

IRFM120ATF

Specifications of IRFM120ATF

Available stocks

Related parts for IRFM120ATF

IRFM120ATF Summary of contents

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Related keywords