ZXMN10A11KTC Diodes Zetex, ZXMN10A11KTC Datasheet

MOSFET N-CH 100V DPAK

ZXMN10A11KTC

Manufacturer Part Number
ZXMN10A11KTC
Description
MOSFET N-CH 100V DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN10A11KTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
5.4nC @ 10V
Input Capacitance (ciss) @ Vds
274pF @ 50V
Power - Max
2.11W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN10A11KTCTR
ZXMN10A11K
100V DPAK N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
10A11
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
V
100
Device
ZXMN10A11KTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK package
DC-DC converters
Power management functions
Disconnect switches
Motor control
0.350 @ V
0.450 @ V
R
DS(on)
Reel size
(inches)
GS
GS
( )
= 10V
13
= 6V
Tape width
I
D
3.5
3.1
(A)
(mm)
16
1
Quantity per reel
2,500
Pinout - top view
G
www.zetex.com
G
D
D
S
D
S

Related parts for ZXMN10A11KTC

ZXMN10A11KTC Summary of contents

Page 1

... Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN10A11KTC 13 Device marking ZXMN 10A11 Issue 1 - August 2006 © Zetex Semiconductors plc 2006 I (A) D 3.5 3.1 Tape width Quantity per reel ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at T ...

Page 3

Thermal characteristics Issue 1 - August 2006 © Zetex Semiconductors plc 2006 ZXMN10A11K 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage V Static drain-source on-state (*) resistance (*) (‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) ...

Page 5

Typical Characteristics Issue 1 - August 2006 © Zetex Semiconductors plc 2006 ZXMN10A11K 5 www.zetex.com ...

Page 6

Typical Characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 1 - August 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Issue 1 - August 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN10A11K www.zetex.com ...

Page 8

Package outline - DPAK DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 ...

Related keywords