FDMS8692 Fairchild Semiconductor, FDMS8692 Datasheet

FDMS8692

Manufacturer Part Number

FDMS8692

Description

MOSFET N-CH 30V 12A POWER56

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDMS8692.pdf (7 pages)

Specifications of FDMS8692

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

9 mOhm @ 12A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

12A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

21nC @ 10V

Input Capacitance (ciss) @ Vds

1265pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-PQFN, Power56

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

10.5 m Ohms

Forward Transconductance Gfs (max / Min)

58 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

12 A

Power Dissipation

41 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDMS8692TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDMS8692

Manufacturer:

Quantity:

166

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDMS8692

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

H&T Electronics

Part Number:

FDMS8692

Quantity:

590

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This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: Kalabkova, Ivana

E-mail: Ivana.Kalabkova@notes.fairchildsemi.com

Phone: 408-822-2187

Implementation of change:

Expected 1st Device Shipment Date: 2010/02/22

Earliest Year/Work Week of Changed Product: 1006

Change Type Description: Alternate Assembly/Test Location/Qualification, Assembly Process,

Lead Finish Composition, Package External Dimension

Description of Change (From): Selected MOSFET products currently assembled in Power 56

package at Fairchild Semiconductor in Cebu, Philippines. Current singulation method is Saw

Singulation; current plating finish is NiPdAu; and current Die Attach Pad & Leadpost plating is

NiPdAu. To view "From/To" Marketing Outline Dimensions, please refer to the attached table

"Marketing Outline Dimensions."

Description of Change (To): Selected MOSFET products assembled in Power 56 package will

also be assembled at GEM Shanghai, China. The alternate singulation method will be Punched

Singulation; alternate plating finish will be Pure Sn; and alternate Die Attach Pad & Leadpost

plating will be Bare Cu.

Reason for Change : Fairchild Semiconductor intends to qualify GEM Shanghai as an alternate

assembly site for Power 56 package to support volume ramp. The Marketing Outline drawing

has been updated to accommodate the dimensions for a punched singulated Power56, as

illustrated in the table. There will be no change on the Part number as both parts share common

landpattern dimensions and thus should be interchangeable from their end. The reference

landpattern drawing is shown for reference. Fairchild Semiconductor's selected MOSFET

devices assembled in Power 56 package will be affected by this change.

Qual/REL Plan Numbers : Q20080150

Qualification :

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Technical Contact:

Name: Rivero, Douglas

E-mail: Doug.Rivero@notes.fairchildsemi.com

Phone: 1-408-822-2143

Date Issued On : 2009/11/24

Date Created : 2009/06/11

PCN# : Q2092401

Pg. 1

Related parts for FDMS8692

FDMS8692 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

This change will not affect the devices' specifications or functional performance. Product quality, reliability and MSL performance will be maintained. There will be no change on the Part number as both parts share common landpattern dimensions and thus should be ...

Page 3

Results/Discussion for Qual Plan NumberQ20080150 Test: (High Temperature Gate Bias) | Conditions: 150C, 20V | Standard: JESD22-A108 Lot Device Q20080150AAHTGB FDMS8670S Q20080150ABHTGB Q20080150ACHTGB Q20080150BAHTGB FDMS8680 Test: (High Temperature Reverse Bias) | Conditions: 125C, 24V | Standard: JESD22-A108 Lot Device Q20080150AAHTRB ...

Page 4

... FDMS8680 96-HOURS 0/77 0/77 0/77 0/77 5000-CYCLES 10000-CYCLES 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 Results 0/154 0/154 0/154 0/154 100-CYCLES 500-CYCLES 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 FDMS8692 Failure Code Failure Code Failure Code Failure Code FDMS8880 Pg. 4 ...

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