ZVP4525ZTA Diodes Zetex, ZVP4525ZTA Datasheet

MOSFET P-CH 250V 200MA SOT-89

ZVP4525ZTA

Manufacturer Part Number
ZVP4525ZTA
Description
MOSFET P-CH 250V 200MA SOT-89
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZVP4525ZTA

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
205mA
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
3.45nC @ 10V
Input Capacitance (ciss) @ Vds
73pF @ 25V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZVP4525ZTR

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Part Number:
ZVP4525ZTA
Quantity:
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250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage switching circuits.
SOT223 and SOT23-6 versions are also available.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 2 - JUNE 2007
DEVICE
ZVP4525ZTA
ZVP4525ZTC
(BR)DSS
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525Z
SOT89 package
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
P52
=-250V; R
DS(ON)
REEL SIZE
(inches)
7
13
=14 ; I
D
=-205mA
TAPE WIDTH (mm)
12mm embossed
12mm embossed
1
QUANTITY
PER REEL
1000 units
4000 units
D
S E M I C O N D U C T O R S
ZVP4525Z
Top View
SOT89
S
D
G

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ZVP4525ZTA Summary of contents

Page 1

... Electronic hook switches • High Voltage Power MOSFET Drivers • Telecom call routers • Solid state relays ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) (inches) ZVP4525ZTA 7 12mm embossed ZVP4525ZTC 13 12mm embossed DEVICE MARKING • P52 ISSUE 2 - JUNE 2007 ZVP4525Z D Top View ...

Page 2

ZVP4525Z ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; TA=25°C)( =10V; TA=70°C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation ...

Page 3

R DS(on) Limit 100m DC 1s 100ms 10m 10ms Single Pulse T =25°C amb Collector-Emitter Voltage (V) CE Safe Operating Area 120 T =25°C amb 100 80 D=0 D=0.2 20 D=0.1 0 100µ ...

Page 4

ZVP4525Z ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

TYPICAL CHARACTERISTICS T = 25°C 1.0 0.8 0.6 0.4 0.2 0 Drain-Source Voltage (V) DS Output Characteristics 25°C 0 Gate-Source Voltage (V) GS Typical Transfer Characteristics 100 2V 2.5V 10 0.01 ...

Page 6

ZVP4525Z 175 C 150 125 100 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage CHARACTERISTICS 10 ...

Page 7

ISSUE 2 - JUNE 2007 TEST CIRCUITS ZVP4525Z ...

Page 8

ZVP4525Z Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer ...

Page 9

PACKAGE DIMENSIONS DIM Millimetres Min Max Min A 4.40 4.60 0.173 B 3.75 4.25 0.150 C 1.40 1.60 0.550 0.28 0.45 0.011 G 0.38 0.55 0.015 H 1.50 1.80 0.060 K 2.60 2.85 0.102 L ...

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