MOSFET P-CH 30V 4.7A 6-TSOP

 

SI3483DV-T1-E3

Manufacturer Part NumberSI3483DV-T1-E3
DescriptionMOSFET P-CH 30V 4.7A 6-TSOP
ManufacturerVishay
SeriesTrenchFET®
SI3483DV-T1-E3 datasheets

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Specifications of SI3483DV-T1-E3

Transistor PolarityP-ChannelFet TypeMOSFET P-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs35 mOhm @ 6.2A, 10V
Drain To Source Voltage (vdss)30VCurrent - Continuous Drain (id) @ 25° C4.7A
Vgs(th) (max) @ Id3V @ 250µAGate Charge (qg) @ Vgs35nC @ 10V
Power - Max1.14WMounting TypeSurface Mount
Package / Case6-TSOPMinimum Operating Temperature- 55 C
ConfigurationSingle Quad DrainDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current4.7 A
Power Dissipation1140 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTContinuous Drain Current Id-6.2A
Drain Source Voltage Vds-30VOn Resistance Rds(on)35mohm
Rds(on) Test Voltage Vgs-10VThreshold Voltage Vgs Typ-1V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesSI3483DV-T1-E3TR
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P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
(V)
R
(Ω)
DS
DS(on)
0.035 at V
= - 10 V
GS
- 30
0.053 at V
= - 4.5 V
GS
TSOP-6
Top View
1
6
3 mm
5
2
3
4
2.85 mm
Ordering Information: Si3483DV-T1-E3 (Lead (Pb)-free)
Si3483DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
a
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72078
S09-2276-Rev. C, 02-Nov-09
FEATURES
• Halogen-free According to IEC 61249-2-21
I
(A)
D
Definition
- 6.2
• TrenchFET
- 5.0
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
= 25 °C, unless otherwise noted
A
Symbol
V
DS
V
GS
T
= 25 °C
A
I
D
T
= 70 °C
A
I
DM
a
I
S
T
= 25 °C
A
P
D
T
= 70 °C
A
T
, T
J
stg
Symbol
t ≤ 5 s
R
thJA
Steady State
R
Steady State
thJF
Si3483DV
Vishay Siliconix
®
Power MOSFET
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
5 s
Steady State
Unit
- 30
V
± 20
- 6.2
- 4.7
- 4.9
- 3.7
A
- 25
- 1.7
- 0.95
2.0
1.14
W
1.3
0.73
- 55 to 150
°C
Typical
Maximum
Unit
45
62.5
90
110
°C/W
25
30
www.vishay.com
1

SI3483DV-T1-E3 Summary of contents

  • Page 1

    ... 4 TSOP-6 Top View 2.85 mm Ordering Information: Si3483DV-T1-E3 (Lead (Pb)-free) Si3483DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

  • Page 2

    ... Si3483DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

  • Page 3

    ... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72078 S09-2276-Rev. C, 02-Nov- °C J 0.8 1.0 1.2 1.4 Si3483DV Vishay Siliconix 1600 1400 1200 C iss 1000 800 600 C oss 400 C rss 200 Drain-to-Source Voltage (V) DS Capacitance 1 6 ...

  • Page 4

    ... Si3483DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 I Limited DM Limited DS(on D(on) 1 Limited ° ...

  • Page 5

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72078. Document Number: 72078 S09-2276-Rev. C, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3483DV Vishay Siliconix - 1 1 www.vishay.com 10 5 ...

  • Page 6

    ... BSC e 1.80 1.90 2.00 0.071 1 L 0.32 - 0.50 0.012 L 0.60 Ref 1 L 0.25 BSC 0.004 Nom 1 Package Information Vishay Siliconix 0. 6-LEAD TSOP 4x 1 0.17 Ref Gauge Plane Seating Plane INCHES Nom Max - 0.043 - 0.004 0.038 ...

  • Page 7

    ... REFLOW SOLDERING Vishay Siliconix surface-mount packages meet solder reflow reliability requirements. Devices are subjected to solder reflow as a test preconditioning and are then reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow temperature profile used, and the temperatures and time duration, are shown in Figures 2 and 3 ...

  • Page 8

    ... AN823 Vishay Siliconix 140 − 170_C 3_C/s (max) FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, junction-to-foot thermal resistance, Rq measured for the device mounted to an infinite heat sink and ...

  • Page 9

    ... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 Return to Index Return to Index www.vishay.com 26 0.099 (2.510) 0.039 0.020 0.019 (1.001) (0.508) (0.493) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72610 Revision: 21-Jan-08 ...

  • Page 10

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...