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SI3483DV-T1-E3
SI3483DV-T1-E3 | |
|---|---|
| Manufacturer Part Number | SI3483DV-T1-E3 |
| Description | MOSFET P-CH 30V 4.7A 6-TSOP |
| Manufacturer | Vishay |
| Series | TrenchFET® |
| SI3483DV-T1-E3 datasheets |
|
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Specifications of SI3483DV-T1-E3 | |||
|---|---|---|---|
| Transistor Polarity | P-Channel | Fet Type | MOSFET P-Channel, Metal Oxide |
| Fet Feature | Logic Level Gate | Rds On (max) @ Id, Vgs | 35 mOhm @ 6.2A, 10V |
| Drain To Source Voltage (vdss) | 30V | Current - Continuous Drain (id) @ 25° C | 4.7A |
| Vgs(th) (max) @ Id | 3V @ 250µA | Gate Charge (qg) @ Vgs | 35nC @ 10V |
| Power - Max | 1.14W | Mounting Type | Surface Mount |
| Package / Case | 6-TSOP | Minimum Operating Temperature | - 55 C |
| Configuration | Single Quad Drain | Drain-source Breakdown Voltage | 30 V |
| Gate-source Breakdown Voltage | +/- 20 V | Continuous Drain Current | 4.7 A |
| Power Dissipation | 1140 mW | Maximum Operating Temperature | + 150 C |
| Mounting Style | SMD/SMT | Continuous Drain Current Id | -6.2A |
| Drain Source Voltage Vds | -30V | On Resistance Rds(on) | 35mohm |
| Rds(on) Test Voltage Vgs | -10V | Threshold Voltage Vgs Typ | -1V |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Other names | SI3483DV-T1-E3TR |
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Si3483DV
Vishay Siliconix
SPECIFICATIONS T
= 25 °C, unless otherwise noted
J
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
a
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
V
= 10 V thru 5 V
GS
20
15
10
5
0
0
1
2
V
- Drain-to-Source Voltage (V)
DS
Output Characteristics
www.vishay.com
2
Symbol
Test Conditions
V
V
= V
, I
= - 250 µA
GS(th)
DS
GS
D
I
V
= 0 V, V
= ± 20 V
GSS
DS
GS
V
= - 30 V, V
= 0 V
DS
GS
I
DSS
V
= - 30 V, V
= 0 V, T
DS
GS
J
≤ - 5 V, V
I
V
= - 10 V
D(on)
DS
GS
V
= - 10 V, I
= - 6.2 A
GS
D
R
DS(on)
V
= - 4.5 V, I
= - 5.0 A
GS
D
g
V
= - 15 V, I
= - 6.2A
fs
DS
D
V
I
= - 1.7 A, V
= 0 V
SD
S
GS
Q
g
Q
V
= - 15 V, V
= - 10 V, I
gs
DS
GS
D
Q
gd
t
d(on)
= 15 Ω
t
V
= - 15 V, R
r
DD
L
≅ - 1 A, V
I
= - 10 V, R
t
D
GEN
d(off)
t
f
t
I
= - 1.7 A, dI/dt = 100 A/µs
rr
F
4 V
3 V
3
4
5
Min.
Typ.
Max.
- 1.0
- 3
± 100
- 1
= 85 °C
- 5
- 25
0.028
0.035
0.042
0.053
14
- 0.8
- 1.2
23
35
= - 6.2 A
3.6
6
10
15
10
15
= 6 Ω
71
110
g
45
70
45
70
25
20
15
10
5
T
= 125 °C
C
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
- Gate-to-Source Voltage (V)
GS
Transfer Characteristics
Document Number: 72078
S09-2276-Rev. C, 02-Nov-09
Unit
V
nA
µA
A
Ω
S
V
nC
ns
3.5
4.0
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