SI7405BDN-T1-GE3 Vishay, SI7405BDN-T1-GE3 Datasheet

MOSFET P-CH 12V 16A 1212-8

SI7405BDN-T1-GE3

Manufacturer Part Number
SI7405BDN-T1-GE3
Description
MOSFET P-CH 12V 16A 1212-8
Manufacturer
Vishay
Datasheet

Specifications of SI7405BDN-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 13.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
115nC @ 8V
Input Capacitance (ciss) @ Vds
3500pF @ 6V
Power - Max
33W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.013 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
13.5 A
Power Dissipation
3600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-16A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7405BDN-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7405BDN-T1-GE3
Manufacturer:
IDT
Quantity:
686
Part Number:
SI7405BDN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7405BDN-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 69941
S-81549-Rev. B, 07-Jul-08
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 12
(V)
8
3.30 mm
D
7
D
0.013 at V
0.017 at V
0.024 at V
6
D
PowerPAK 1212-8
Si7405BDN-T1-E3 (Lead (Pb)-free)
Si7405BDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
h
R
Bottom View
5
ttp://www.vishay.com/ppg?73257).. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
GS
GS
GS
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
1
= 150 °C)
b, f
S
2
S
P-Channel 12-V (D-S) MOSFET
3
S
3.30 mm
4
I
G
- 16
- 16
- 16
D
(A)
a
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
46 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• Load Switch, PA Switch and Power Switch for Portable
Symbol
Symbol
T
R
R
Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
G
2.9
28
P-Channel MOSFET
- 55 to 150
- 13.5
- 11
3.6
2.3
Limit
- 3
- 16
- 16
- 16
- 12
- 40
260
± 8
33
21
b, c
b, c
b, c
S
D
b, c
a
a
b, c
a
Maximum
3.8
35
Vishay Siliconix
Si7405BDN
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI7405BDN-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7405BDN-T1-E3 (Lead (Pb)-free) Si7405BDN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7405BDN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 69941 S-81549-Rev. B, 07-Jul-08 New Product 2.0 2.5 3.0 6000 5000 4000 3000 2000 1000 Si7405BDN Vishay Siliconix 125 ° ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si7405BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0.2 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.04 0. °C J 0.02 0.01 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69941 S-81549-Rev. B, 07-Jul-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7405BDN Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... Si7405BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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