Audio Amplifiers 2X10W BTL CLASS D AMP+VOLCTRL

TDA8933T

Manufacturer Part NumberTDA8933T
DescriptionAudio Amplifiers 2X10W BTL CLASS D AMP+VOLCTRL
ManufacturerNXP Semiconductors
TDA8933T datasheet
 

Specifications of TDA8933T

ProductClass-DOutput Power32 W
Available Set Gain36 dBCommon Mode Rejection Ratio (min)75 dB
Thd Plus Noise0.011 %Operating Supply Voltage25 V
Supply Current0.6 mAMaximum Power Dissipation5000 mW
Maximum Operating Temperature+ 85 CMounting StyleSMD/SMT
Audio Load Resistance16 OhmsDual Supply Voltage+/- 12.5 V
Input Signal TypeDifferentialMinimum Operating Temperature- 40 C
Output Signal TypeDifferential, SingleSupply TypeSingle or Dual
Supply Voltage (max)36 VSupply Voltage (min)10 V
Output Type1-Channel Mono or 2-Channel StereoPackage / CaseSOIC-32
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesTDA8933T/N1,112
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TDA8933
Class-D audio amplifier
Rev. 01 — 15 May 2007
1. General description
The TDA8933 is a high efficiency class-D amplifier with low power dissipation.
The continuous time output power is 2
(R
= 8 ) or 1
L
dissipation the device can be used without any external heat sink when playing music.
Due to the implementation of Thermal Foldback (TF), even for high supply voltages and/or
lower load impedances, the device will continue to operate with considerable music output
power without the need for an external heat sink.
The device has two full differential inputs driving two independent outputs. It can be used
in a mono full bridge configuration (Bridge-Tied Load (BTL)) or a stereo half bridge
configuration (Single-Ended (SE)).
2. Features
I
High efficiency
I
Application without heat sink using thermally enhanced small outline package
I
Operating voltage from 10 V to 36 V asymmetrical or
I
Thermally protected
I
Thermal foldback
I
Current limiting to avoid audio holes
I
Full short circuit proof to supply lines (using advanced current protection)
I
Switchable internal / external oscillator (master-slave setting)
I
No pop noise
I
Low power dissipation
I
Mono bridge-tied load (full bridge) or stereo single-ended (half bridge) application
I
Full differential inputs
3. Applications
I
Flat panel television sets
I
Flat panel monitor sets
I
Multimedia systems
I
Wireless speakers
I
Mini/micro systems
I
Home sound sets
10 W in a stereo half bridge application
20 W in a mono full bridge application (R
Preliminary data sheet
=16 ). Due to the low power
L
5 V to
18 V symmetrical

TDA8933T Summary of contents

  • Page 1

    TDA8933 Class-D audio amplifier Rev. 01 — 15 May 2007 1. General description The TDA8933 is a high efficiency class-D amplifier with low power dissipation. The continuous time output power dissipation ...

  • Page 2

    ... NXP Semiconductors 4. Quick reference data Table 1. Symbol Parameter General q(tot) Stereo SE channel P o(RMS) TDA8933_1 Preliminary data sheet Quick reference data Conditions = 320 kHz unless specified otherwise p osc amb supply voltage asymmetrical supply symmetrical supply supply current Sleep mode total quiescent Operating mode ...

  • Page 3

    ... Output power is measured indirectly, based on R [2] 2 layer application board (55 mm convection. 5. Ordering information Table 2. Ordering information Type number Package Name TDA8933T SO32 TDA8933_1 Preliminary data sheet Quick reference data …continued Conditions RMS output power continuous time output power THD THD ...

  • Page 4

    ... NXP Semiconductors 6. Block diagram V OSCREF DDA 8 10 OSCILLATOR 2 IN1P V 3 IN1N 12 INREF + V SSA 15 IN2P 14 IN2N 7 CGND 4 DIAG 6 POWERUP 5 ENGAGE CGND 9 V SSA Fig 1. Block diagram TDA8933_1 Preliminary data sheet OSCIO 31 SSD PWM MODULATOR MANAGER PWM MODULATOR PROTECTIONS OVP, OCP, OTP UVP, TF, WP ...

  • Page 5

    ... V SSD(HW) DREF TDA8933_1 Preliminary data sheet 1 V SSD(HW) 2 IN1P IN1N 3 4 DIAG 5 ENGAGE 6 POWER UP CGND DDA TDA8933T 9 V SSA OSCREF 10 11 HVPREF 12 INREF 13 TEST IN2N 14 15 IN2P 16 V SSD(HW) Pinning description Pin Description 1 negative digital supply voltage and handle wafer connection ...

  • Page 6

    ... NXP Semiconductors Table 3. Symbol HVP2 V DDP2 BOOT2 OUT2 V SSP2 STAB2 STAB1 V SSP1 OUT1 BOOT1 V DDP1 HVP1 OSCIO V SSD(HW) 8. Functional description 8.1 General The TDA8933 is a mono full bridge or stereo half bridge audio power amplifier using class-D technology. The audio input signal is converted into a Pulse Width Modulated (PWM) signal via an analog input stage and PWM modulator ...

  • Page 7

    ... NXP Semiconductors 8.2 Mode selection and interfacing The TDA8933 can be switched to one of four operating modes using pins POWERUP and ENGAGE: • Sleep mode: with low supply current • Mute mode: the amplifiers are switching idle (50 % duty cycle), but the audio signal at ...

  • Page 8

    ... NXP Semiconductors V P POWERUP DREF HVPREF HVP1, HVP2 0.43V ENGAGE 0.3V ENGAGE ENGAGE audio OUT1, OUT2 PWM DIAG OSCIO Fig 3. Start-up sequence 8.3 Pulse width modulation frequency The output signal of the amplifi PWM signal with a carrier frequency of approximately 320 kHz. Using a 2nd-order-low-pass filter in the application results in an analog audio signal across the loudspeaker ...

  • Page 9

    ... NXP Semiconductors 12.45x10 f = ------------------------ - osc Where oscillator frequency (Hz) osc R = oscillator resistor ( ) (on pin OSCREF) osc Fig 4. Oscillation frequency as a function of R Table 5 Table 5. Configuration Master Slave 8.4 Protections The following protections are implemented in the TDA8933: • Thermal Foldback (TF) • OverTemperature Protection (OTP) • ...

  • Page 10

    ... NXP Semiconductors 8.4.1 Thermal Foldback (TF) If the junction temperature of the TDA8933 exceeds the threshold level (T gain of the amplifier is decreased gradually to a level where the combination of dissipation (P) and the thermal resistance from junction to ambient (R junction temperature around the threshold level. This means that the device will not switch off completely, but remains operational at lower output power levels ...

  • Page 11

    ... NXP Semiconductors If the supply voltage exceeds 36 V, the OVP circuit is activated and the power stages will shut down re-enabled as soon as the supply voltage drops below the threshold level. The system is restarted again after 100 ms. It should be noted that supply voltages > may damage the TDA8933. Two conditions should be distinguished: • ...

  • Page 12

    ... NXP Semiconductors 8.5 Diagnostic input and output Whenever one of the protections is triggered, except for TF, pin DIAG is activated to LOW level (see approximately 2.4 V. This internal reference supply can deliver approximately 50 A. The DIAG pin refers to pin CGND.The diagnostic output signal during different short circuit conditions is illustrated in device into Fault mode ...

  • Page 13

    ... NXP Semiconductors 8.7 Output voltage buffers When pin POWERUP is set HIGH, the half supply output voltage buffers are switched on in asymmetrical supply configuration. The start-up will be pop free because the device starts switching when the capacitor on pin HVPREF and the SE capacitors are completely charged ...

  • Page 14

    ... NXP Semiconductors 9. Internal circuitry Table 7. Pin 1, 16, 17 TDA8933_1 Preliminary data sheet Internal circuitry Symbol Equivalent circuit SSD(HW) IN1P IN1N INREF IN2N IN2P DIAG ENGAGE Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier 1, 16, V DDA 17 SSA 001aad784 V DDA 13 V SSA 001aad795 V 2 ...

  • Page 15

    ... NXP Semiconductors Table 7. Pin TDA8933_1 Preliminary data sheet Internal circuitry …continued Symbol Equivalent circuit POWERUP CGND V DDA V SSA Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier V DDA 6 V CGND 001aad788 SSA V DDA 7 V SSA 001aad789 8 V SSA V SSD 001aad790 V DDA ...

  • Page 16

    ... NXP Semiconductors Table 7. Pin TDA8933_1 Preliminary data sheet Internal circuitry …continued Symbol Equivalent circuit OSCREF HVPREF TEST DREF HVP2 HVP1 V DDP2 V SSP2 V SSP1 V DDP1 Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier V DDA I ref 10 V 001aad792 SSA V DDA 11 V SSA ...

  • Page 17

    ... NXP Semiconductors Table 7. Pin TDA8933_1 Preliminary data sheet Internal circuitry …continued Symbol Equivalent circuit BOOT2 BOOT1 OUT2 OUT1 STAB2 STAB1 OSCIO Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier 21, 28 OUT1, OUT2 001aad799 V DDP1, V DDP2 22 SSP1, V SSP2 010aaa202 V DDA 24, 25 ...

  • Page 18

    ... NXP Semiconductors 10. Limiting values Table 8. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ORM stg T amb P [1] Measured with respect to pin INREF; V [2] Measured with respect to pin V [3] Measured with respect to pin CGND [5] Current limiting concept. 11. Thermal characteristics Table 9 ...

  • Page 19

    ... NXP Semiconductors 12. Static characteristics Table 10. Characteristics 320 kHz and T P osc amb Symbol Parameter Supply V supply voltage P I supply current P I total quiescent current q(tot) Series resistance output switches R drain-source on-state DSon resistance Power up input: pin POWERUP V input voltage I I input current ...

  • Page 20

    ... NXP Semiconductors Table 10. Characteristics …continued 320 kHz and T P osc amb Symbol Parameter Amplifier outputs: pins OUT1 and OUT2 V output offset voltage O(offset) Stabilizer output: pins STAB1, STAB2 V output voltage O Voltage protections V undervoltage protection P(uvp) supply voltage V overvoltage protection P(ovp) ...

  • Page 21

    ... NXP Semiconductors 13. Dynamic characteristics Table 11. Switching characteristics unless otherwise specified. P amb Symbol Parameter Internal oscillator f oscillator frequency osc Timing PWM output: pins OUT1 and OUT2 t rise time r t fall time f t minimum pulse width w(min) Table 12. SE characteristics kHz Symbol ...

  • Page 22

    ... NXP Semiconductors Table 12. SE characteristics …continued kHz Symbol Parameter V noise output voltage n(o) V mute output voltage O(mute) CMRR common mode rejection ratio output power efficiency po [1] Output power is measured indirectly; based on R [2] 2 layer application board (55 mm [3] THD+N is measured in a bandwidth kHz, AES17 brick wall. ...

  • Page 23

    ... NXP Semiconductors Table 13. BTL characteristics kHz Symbol Parameter V noise output voltage n(o) V mute output voltage O(mute) CMRR common mode rejection ratio output power efficiency po [1] Output power is measured indirectly; based on R [2] 2 layer application board (55 mm [3] THD+N is measured in a bandwidth kHz, AES17 brick wall. ...

  • Page 24

    ... NXP Semiconductors 14. Application information 14.1 Output power estimation The output power P configurations can be estimated using SE configuration 0.5 % BTL configuration 0.5 % Where supply voltage load resistance ( L R DSon R = series resistance output inductor ( s R ESR t w(min oscillator frequency (Hz); 320 kHz typical with R ...

  • Page 25

    ... NXP Semiconductors ( THD+N = 0.5 % (1) When the maximum current reached, the current limitation feature becomes active. See also details. Fig 7. SE output power as a function of supply voltage ( THD+N = 0.5 % (1) When the maximum current reached, the current limitation feature becomes active. See also details ...

  • Page 26

    ... NXP Semiconductors 14.2 Output current limiting The peak output current I operation the output current should not exceed this threshold level, otherwise the signal is distorted. The peak output current BTL configurations can be calculated using Equation 5 SE configuration max BTL configuration: ...

  • Page 27

    ... NXP Semiconductors 14.4 Single-ended capacitor The SE capacitor forms a high-pass filter with the speaker impedance. So the frequency response will roll off with 20 dB per decade below f The 3 dB cut-off frequency is equal to – 3dB Where cut-off frequency (Hz) 3dB R = load resistance ( single-ended capacitance (F); see ...

  • Page 28

    ... NXP Semiconductors R1 = series resistors ( R2 = series resistors ( ----------------- - EQ R3 Where equivalent resistance ( parallel resistor ( Z = internal input impedance ( i Example: Substituting 4 results in a gain of G 14.6 Device synchronization If two or more TDA8933 devices are used in one application it is recommended that all devices are synchronized at the same switching frequency to avoid beat tones. ...

  • Page 29

    ... NXP Semiconductors 14.7 Thermal behavior (printed-circuit board considerations) The heat sink in an application with a TDA8933 is made using the copper on the printed-circuit board. The TDA8933 uses the four corner leads (pins 1, 16, 17 and 32) for heat transfer from the die to the PCB. The thermal foldback will limit the maximum junction temperature to 140 C ...

  • Page 30

    ... NXP Semiconductors Fig 11. SE application for reducing pumping effect 14.9 SE curves measured in the reference design THD+N (%) (1) f ( Fig 12. Total harmonic distortion-plus-noise as a function of output power TDA8933_1 Preliminary data sheet IN1P audio in1 IN1N IN2N audio in2 IN2P kHz kHz i = 100 ...

  • Page 31

    ... NXP Semiconductors THD+N (%) (1) f ( Fig 13. Total harmonic distortion-plus-noise as a function of output power THD+N (%) ( Fig 14. Total harmonic distortion-plus-noise as a function of frequency TDA8933_1 Preliminary data sheet kHz kHz i = 100 (1) ( Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier 010aaa156 (1) (3) ( (W/channel) ...

  • Page 32

    ... NXP Semiconductors THD+N (%) ( Fig 15. Total harmonic distortion-plus-noise as a function of frequency (dB) 30 ( (RMS Fig 16. Gain as a function of frequency TDA8933_1 Preliminary data sheet (1) ( 010aaa146 SVRR (dB (Hz 1000 F ( 1000 F (2) V Fig 17. Supply voltage ripple rejection as a function of Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifi ...

  • Page 33

    ... NXP Semiconductors 120 S/N (dB kHz brick wall filter AES17 Fig 18. Signal-to-noise ratio as a function of output power 100 po (%) ( kHz ( kHz Fig 20. Output power efficiency as a function of output power TDA8933_1 Preliminary data sheet 010aaa148 20 cs (dB 100 (W/channel) o (1) V (2) V Fig 19. Channel separation as a function of frequency 010aaa149 3 ...

  • Page 34

    ... NXP Semiconductors (W) 15 (1) ( kHz i ( SE; THD = ( SE; THD = 0 ( SE; THD = ( SE; THD = 0 Fig 22. Output power per channel as a function of supply voltage (W/channel) 16 ( 150 300 ( ( layer application board (55 mm copper, FR4 base material in free air with natural convection SE kHz L i Fig 24. Output power as a function of time ...

  • Page 35

    ... NXP Semiconductors V (V) Fig 25. Output voltage as a function of voltage on pin POWERUP V (V) Fig 26. Output voltage as a function of voltage on pin ENGAGE TDA8933_1 Preliminary data sheet SLEEP kHz 100 mV; V > ENGAGE MUTE kHz 100 Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier ...

  • Page 36

    ... NXP Semiconductors 14.10 BTL curves measured in the reference design THD+N (%) (1) f ( Fig 27. Total harmonic distortion-plus-noise as a function of output power THD+N (%) (1) f ( Fig 28. Total harmonic distortion-plus-noise as a function of output power TDA8933_1 Preliminary data sheet kHz kHz i = 100 kHz kHz i = 100 ...

  • Page 37

    ... NXP Semiconductors THD+N (%) ( Fig 29. Total harmonic distortion-plus-noise as a function of frequency THD+N (%) ( Fig 30. Total harmonic distortion-plus-noise as a function of frequency TDA8933_1 Preliminary data sheet ( ( ( ( Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier 010aaa162 (Hz) i 010aaa163 (Hz) i © NXP B.V. 2007. All rights reserved. ...

  • Page 38

    ... NXP Semiconductors (dB (RMS Fig 31. Gain as a function of frequency 100 po (%) ( kHz ( kHz Fig 32. Output power efficiency as a function of output power TDA8933_1 Preliminary data sheet 010aaa150 (2) P (1) ( (W) o (1) V (2) V Fig 33. Power dissipation as a function of output power Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier ...

  • Page 39

    ... NXP Semiconductors ( (3) ( kHz i ( BTL; THD = ( BTL; THD = 0 ( BTL; THD = ( BTL; THD = 0 Fig 34. Output power as a function of supply voltage 32 ( ( 120 240 360 ( ( layer application board (55 mm copper, FR4 base material in free air with natural convection BTL kHz L i Fig 36. Output power as a function of time ...

  • Page 40

    ... NXP Semiconductors 14.11 Typical application schematics (simplified) V Cin 470 nF + Cin 470 nF MUTE CONTROL Cen 470 nF SLEEP CONTROL V Cosc 100 nF V Rosc V SSA 39 Cinref 100 nF Cin 470 nF + Cin 470 nF V Rvdda DDA 10 Cvdda 100 nF GND Cvssa 100 nF Rvssa SSA 10 Fig 37. Typical simplified application diagram for 2 ...

  • Page 41

    ... NXP Semiconductors Cin 470 nF + Cin 470 nF MUTE CONTROL SLEEP CONTROL V SSA Rvdda DDA 10 Cvdda 100 nF GND Cvssa 100 nF Rvssa SSA 10 Fig 38. Typical simplified application diagram for 1 TDA8933_1 Preliminary data sheet V SSD(HW SSA IN1P 2 IN1N 3 DIAG 4 ENGAGE 5 Cen 470 nF POWERUP 6 CGND ...

  • Page 42

    ... NXP Semiconductors Rvdda VP 10 GND Cin 470 nF + Cin 470 nF MUTE CONTROL Cen 470 nF SLEEP CONTROL VPA Cosc 100 nF Rosc 39 Chvpref Chvp 47 F/25 V 100 nF Cinref 100 nF Cin 470 nF + Cin 470 nF Fig 39. Typical simplified application diagram for 2 TDA8933_1 Preliminary data sheet VP VPA ...

  • Page 43

    ... NXP Semiconductors Rvdda VP 10 GND Cin 470 nF + Cin 470 nF MUTE CONTROL Cen 470 nF SLEEP CONTROL Cosc 100 nF Rosc 39 HVPREF Chvp 100 nF Fig 40. Typical simplified application diagram for 1 TDA8933_1 Preliminary data sheet VP VPA Cvdda Cvddp 100 nF 220 F/ SSD(HW IN1P 2 31 IN1N ...

  • Page 44

    ... NXP Semiconductors 15. Package outline SO32: plastic small outline package; 32 leads; body width 7 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.3 2.45 mm 2.65 0.25 0.1 2.25 0.012 0.096 inches 0.1 0.01 0.004 0.089 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

  • Page 45

    ... NXP Semiconductors 16. Revision history Table 16. Revision history Document ID Release date TDA8933_1 20070515 TDA8933_1 Preliminary data sheet Data sheet status Change notice Preliminary data sheet - Rev. 01 — 15 May 2007 TDA8933 Class-D audio amplifier Supersedes - © NXP B.V. 2007. All rights reserved. ...

  • Page 46

    ... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

  • Page 47

    ... NXP Semiconductors 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 5 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Functional description . . . . . . . . . . . . . . . . . . . 6 8.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.2 Mode selection and interfacing . . . . . . . . . . . . . 7 8.3 Pulse width modulation frequency . . . . . . . . . . 8 8 ...