SI7421DN-T1-E3 Vishay, SI7421DN-T1-E3 Datasheet

MOSFET P-CH 30V 6.4A 1212-8

SI7421DN-T1-E3

Manufacturer Part Number
SI7421DN-T1-E3
Description
MOSFET P-CH 30V 6.4A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI7421DN-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 9.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Transistor Polarity
P Channel
Continuous Drain Current Id
-9.8A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
43mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7421DN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7421DN-T1-E3
Manufacturer:
TI
Quantity:
60
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72416
S-83051-Rev. D, 29-Dec-08
Ordering Information: Si7421DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 30
8
(V)
3.30 mm
D
7
D
6
PowerPAK 1212-8
D
Si7421DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
Bottom View
0.043 at V
0.025 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
a
GS
GS
2
= - 4.5 V
(Ω)
S
= - 10 V
P-Channel 30-V (D-S) MOSFET
3
S
a
3.30 mm
4
G
a
b, c
A
I
= 25 °C, unless otherwise noted
- 9.8
- 7.4
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New PowerPAK
• Battery Switch
Symbol
Symbol
T
R
R
J
Available
- Low Thermal Resistance, R
- Low 1.07 mm Profile
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
- 9.8
10 s
®
3.6
1.9
2.9
- 7
- 3
28
65
G
Package
P-Channel MOSFET
- 55 to 150
± 20
- 30
- 30
260
Steady State
S
D
Maximum
thJC
- 6.4
- 4.6
- 1.3
1.5
0.8
3.8
35
81
Vishay Siliconix
Si7421DN
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI7421DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7421DN-T1-E3 (Lead (Pb)-free) Si7421DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7421DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72416 S-83051-Rev. D, 29-Dec- °C J 0.8 1.0 1.2 1.4 Si7421DN Vishay Siliconix 2000 1600 C iss 1200 800 C 400 oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.4 1.3 1 ...

Page 4

... Si7421DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °, unless otherwise noted 0.6 0 250 µA D 0.4 0.3 0.2 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited by R ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72416. Document Number: 72416 S-83051-Rev. D, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7421DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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