IRFL214TRPBF Vishay, IRFL214TRPBF Datasheet - Page 3

MOSFET N-CH 250V 790MA SOT223

IRFL214TRPBF

Manufacturer Part Number
IRFL214TRPBF
Description
MOSFET N-CH 250V 790MA SOT223
Manufacturer
Vishay
Datasheets

Specifications of IRFL214TRPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 470mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
790mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.79 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
790mA
Drain Source Voltage Vds
250V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFL214PBFTR
IRFL214TRPBF
IRFL214TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFL214TRPBF
Manufacturer:
IR
Quantity:
11 560
Part Number:
IRFL214TRPBF
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
IRFL214TRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91194
S10-1257-Rev. C, 31-May-10
SPECIFICATIONS (T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
J
= 25 °C, unless otherwise noted)
a
SYMBOL
V
I
Q
t
SM
I
t
SD
on
S
rr
rr
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= 25 °C, I
TEST CONDITIONS
F
= 2.7 A, dI/dt = 100 A/μs
S
= 0.79 A, V
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 3 - Typical Transfer Characteristics
GS
G
= 0 V
b
D
S
IRFL214, SiHFL214
b
MIN.
-
-
-
-
-
Vishay Siliconix
TYP.
0.64
190
-
-
-
www.vishay.com
MAX.
0.79
390
6.3
2.0
1.3
S
and L
D
UNIT
)
μC
ns
A
V
3

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