IRFR320TRPBF Vishay, IRFR320TRPBF Datasheet

MOSFET N-CH 400V 3.1A DPAK

IRFR320TRPBF

Manufacturer Part Number
IRFR320TRPBF
Description
MOSFET N-CH 400V 3.1A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR320TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
3.1A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
1.8ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
1.8 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFR320PBFTR

Available stocks

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Manufacturer
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IRFR320TRPBF
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Quantity:
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IRFR320TRPBF
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VISHAY
Quantity:
12 470
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IRFR320TRPBF
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50 000
Company:
Part Number:
IRFR320TRPBF
Quantity:
50 000
Company:
Part Number:
IRFR320TRPBF
Quantity:
51 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91273
S10-1135-Rev. C, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(TO-252)
D
(Max.) (nC)
(nC)
DPAK
(V)
(nC)
≤ 3.1 A, dI/dt ≤ 65 A/μs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 29 mH, R
G
c
a
D S
a
DD
b
V
≤ V
GS
DPAK (TO-252)
SiHFR320-GE3
IRFR320PbF
SiHFR320-E3
IRFR320
SiHFR320
e
= 10 V
DS
, T
G
J
e
N-Channel MOSFET
Single
≤ 150 °C.
400
3.3
20
11
g
= 25 Ω, I
C
= 25 °C, unless otherwise noted
D
S
Power MOSFET
V
IRFR320, IRFU320, SiHFR320, SiHFU320
DPAK (TO-252)
SiHFR320TRL-GE3
IRFR320TRLPbF
SiHFR320TL-E3
IRFR320TRL
SiHFR320TL
1.8
GS
AS
at 10 V
= 3.1 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
a
a
T
T
C
C
a
= 100 °C
a
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR320,SiHFR320)
• Straight Lead (IRFU320,SiHFU320)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
Definition
DPAK (TO-252)
SiHFR320TR-GE3
IRFR320TRPbF
SiHFR320T-E3
IRFR320TR
SiHFR320T
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
a
D
a
D
stg
a
a
a
design,
DPAK (TO-252)
-
IRFR320TRRPbF
SiHFR320TR-E3
IRFR320TRR
SiHFR320TR
- 55 to + 150
LIMIT
0.020
260
± 20
0.33
400
160
3.1
2.0
3.1
4.2
2.5
4.0
12
42
low
Vishay Siliconix
d
a
a
on-resistance
a
a
IPAK (TO-251)
SiHFU320-GE3
IRFU320PbF
SiHFU320-E3
IRFU320
SiHFU320
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRFR320TRPBF Summary of contents

Page 1

... The straight S lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W N-Channel MOSFET are possible in typical surface mount applications. DPAK (TO-252) DPAK (TO-252) a SiHFR320TRL-GE3 SiHFR320TR-GE3 a IRFR320TRLPbF IRFR320TRPbF a SiHFR320TL-E3 SiHFR320T-E3 a IRFR320TRL IRFR320TR a SiHFR320TL SiHFR320T = 25 °C, unless otherwise noted ° ...

Page 2

... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91273 S10-1135-Rev. C, 10-May-10 IRFR320, IRFU320, SiHFR320, SiHFU320 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91273 S10-1135-Rev. C, 10-May-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91273 S10-1135-Rev. C, 10-May-10 IRFR320, IRFU320, SiHFR320, SiHFU320 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

Page 6

... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91273. Document Number: 91273 S10-1135-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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