ZVN4206A Diodes Zetex, ZVN4206A Datasheet
ZVN4206A
Manufacturer Part Number
ZVN4206A
Description
MOSFET N-CH 60V 600MA TO92-3
Manufacturer
Diodes Zetex
Type
Small Signalr
Datasheet
1.ZVN4206A.pdf
(3 pages)
Specifications of ZVN4206A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
100pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
1Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Continuous Drain Current
600mA
Power Dissipation
700mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Compliant
Other names
VN0206N3
VN0300M
VN0300M
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN4206A
Manufacturer:
ZETEX
Quantity:
565
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JUNE 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
60 Volt V
R
DS(on)
= 1
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
source impedance and <5ns rise time on a pulse generator
60
1.3
3
300
amb
I
SYMBOL
V
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
100
10
100
1
1.5
100
60
20
8
12
12
15
stg
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
-55 to +150
= 20V, V
=60V, V
=48V, V
=25V, V
=10V,I
=5V,I
=25V,I
=25V, V
VALUE
25V, I
600
0.7
60
ZVN4206A
8
20
TO92 COMPATIBLE
D
=500mA
D
D
GS
DS
=1.5A
=1.5A
GS
GS
GS
GS
D
D
=0V
=1.5A
= V
DS
G
=0
=0V, T=125°C
=10V
=0V, f=1MHz
S
E-LINE
=0V
GS
UNIT
mA
°C
W
A
V
V
(2)
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ZVN4206A Summary of contents
Page 1
... D(on DS(on) 1.5 g 300 100 pF iss oss rss d(on d(off source impedance and <5ns rise time on a pulse generator ZVN4206A E-LINE TO92 COMPATIBLE VALUE UNIT 60 600 8 20 0.7 -55 to +150 I =1mA ID=1mA 20V =60V =48V, V =0V, T=125° =25V, V =10V ...
Page 2
... ZVN4206A TYPICAL CHARACTERISTICS 10 V GS= 20V 16V 8 14V 12V Drain Source Voltage (Volts Output Characteristics Gate Source Voltage (Volts) GS- Voltage Saturation Characteristics 4.5V V =3. 1.0 0.1 0.1 1.0 I Drain Current (Amps) D- On-resistance v drain current 10V 4. 3. Saturation Characteristics 1.5A 0. Transfer Characteristics 8V 10V 2 ...
Page 3
... Transconductance v gate-source voltage iss 4 C oss 2 C rss 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 Gate charge v gate-source voltage 3-383 ZVN4206A V 10V DS -Gate Source Voltage (Volts 40V 60V 20V I 1.5A D= Q-Charge (nC) ...