SI4430BDY-T1-GE3 Vishay, SI4430BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4430BDY-T1-GE3
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4430BDY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4430BDY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73184.
Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
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0.1
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1
10
-4
Duty Cycle = 0.5
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0.05
0.02
Single Pulse
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-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
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10
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Vishay Siliconix
Si4430BDY
www.vishay.com
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