ZXMN6A09KTC Diodes Zetex, ZXMN6A09KTC Datasheet

MOSFET N-CH 60V 11.2A DPAK

ZXMN6A09KTC

Manufacturer Part Number
ZXMN6A09KTC
Description
MOSFET N-CH 60V 11.2A DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN6A09KTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 7.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
7.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1426pF @ 30V
Power - Max
2.15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN6A09KTCTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A09KTC
Manufacturer:
ROHM
Quantity:
2 156
ZXMN6A09K
60V N-channel enhancement mode MOSFET in DPAK
Summary
V
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A09K
Issue 5 - January 2007
© Zetex Semiconductors plc 2007
Device
ZXMN6A09KTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK (T0-252) package
DC-DC converters
Power management functions
Disconnect switches
Motor control
=60V : R
DS(on)
=0.040 ; I
Reel size
(inches)
13
D
=12.2A
Tape width
(mm)
1
16
Quantity
per reel
2500
Pinout - top view
www.zetex.com
G
G
D
D
S
D
S

Related parts for ZXMN6A09KTC

ZXMN6A09KTC Summary of contents

Page 1

... Low gate drive • DPAK (T0-252) package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A09KTC Device marking ZXMN 6A09K Issue 5 - January 2007 © Zetex Semiconductors plc 2007 =12.2A D Tape width (mm ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...

Page 3

Characteristics Issue 5 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09K 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 5 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09K 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 5 - January 2007 © Zetex Semiconductors plc 2007 ...

Page 7

Package outline - DPAK DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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