MOSFET N-CH 500V 5A TO-220F

FDPF5N50T

Manufacturer Part NumberFDPF5N50T
DescriptionMOSFET N-CH 500V 5A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF5N50T datasheet
 

Specifications of FDPF5N50T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.4 Ohm @ 2.5A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs15nC @ 10VInput Capacitance (ciss) @ Vds640pF @ 25V
Power - Max28WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)1.4 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current5 APower Dissipation28000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CFall Time20 ns
Rise Time22 nsLead Free Status / RoHS StatusLead free / RoHS Compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 1/10

Download datasheet (266Kb)Embed
Next
FDP5N50 / FDPF5N50
N-Channel MOSFET
500V, 5A, 1.4Ω
Features
• R
= 1.15Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 11nC)
• Low C
( Typ. 5pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP5N50 / FDPF5N50 Rev. A
Description
= 2.5A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
TO-220F
D
G
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
December 2007
UniFET
D
G
S
FDP5N50
FDPF5N50
500
±30
5
5*
3
3*
(Note 1)
20
20*
(Note 2)
225
(Note 1)
5
(Note 1)
8.5
(Note 3)
4.5
85
28
0.67
0.22
-55 to +150
300
FDP5N50
FDPF5N50
1.4
4.5
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
switching
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF5N50T Summary of contents

  • Page 1

    ... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP5N50 / FDPF5N50 Rev. A Description = 2.5A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

  • Page 2

    Package Marking and Ordering Information Device Marking Device FDP5N50 FDP5N50 FDPF5N50 FDPF5N50 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS ...

  • Page 3

    Typical Performance Characteristics Figure 1. On-Region Characteristics 15.0V GS 10.0V 10 8.0 V 7.0 V 6.5 V 6 0.1 0.04 0 ,Drain-Source Voltage[V] DS Figure 3. On-Resistance Variation vs. Drain Current ...

  • Page 4

    Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 - Junction Temperature J Figure 9. Maximum Safe Operating Area - FDP5N50 Operation in This Area is Limited ...

  • Page 5

    Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDP5N50 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. Figure 13. Transient Thermal Response Curve - FDPF5N50 10 0.5 1 0.2 0.1 0.05 0.02 ...

  • Page 6

    FDP5N50 / FDPF5N50 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ...

  • Page 8

    Mechanical Dimensions FDP5N50 / FDPF5N50 Rev. A TO-220 8 www.fairchildsemi.com ...

  • Page 9

    Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP5N50 / FDPF5N50 Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions ...

  • Page 10

    ... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...