MOSFET N-CH 100V 20A TO-220F

FDPF3860T

Manufacturer Part NumberFDPF3860T
DescriptionMOSFET N-CH 100V 20A TO-220F
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDPF3860T datasheet
 


Specifications of FDPF3860T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs38.2 mOhm @ 5.9A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C20AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs35nC @ 10VInput Capacitance (ciss) @ Vds1800pF @ 25V
Power - Max33.8WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0382 Ohm @ 10 V
Drain-source Breakdown Voltage100 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current20 APower Dissipation33800 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (642Kb)Embed
Next
FDPF3860T
N-Channel PowerTrench
100V, 20A, 38.2mΩ
Description
• R
= 38.2mΩ ( MAX ) @ V
DS(on)
GS
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
G
D
S
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. A
®
MOSFET
General Description
= 10V, I
= 5.9A
This N-Channel MOSFET is produced using Fairchild Semicon-
D
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
DS(on)
Application
• DC to AC converters / Synchronous Rectification
TO-220F
o
T
= 25
C unless otherwise noted
C
Parameter
o
- Continuous (T
= 25
C)
C
o
- Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
March 2008
D
G
S
Ratings
100
±20
20
12.7
(Note 1)
80
(Note 2)
278
(Note 1)
20
(Note 1)
3.4
(Note 3)
15
33.8
0.27
-55 to +150
300
Ratings
3.7
62.5
www.fairchildsemi.com
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF3860T Summary of contents

  • Page 1

    ... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDPF3860T Rev. A ® MOSFET General Description = 10V 5.9A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

  • Page 2

    ... Starting ≤ 5.9A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDPF3860T Rev. A Package Reel Size TO-220F - unless otherwise noted C Test Conditions I = 250µA, V ...

  • Page 3

    ... Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = iss C rss = C gd 1500 1000 C oss 500 C rss 0 0 Drain-Source Voltage [V] DS FDPF3860T Rev. A Figure 2. Transfer Characteristics 200 100 10 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 200 100 20V ...

  • Page 4

    ... Operation in This Area 1 is Limited by R DS(on) *Notes: 0 Single Pulse 0.01 0 Drain-Source Voltage [ 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDPF3860T Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 µ 250 A D 0.0 100 150 200 µ µ ...

  • Page 5

    ... FDPF3860T Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDPF3860T Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

  • Page 7

    ... Package Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FDPF3860T Rev. A TO-220F ±0.20 10.16 ø3.18 ±0.10 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 7 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 8

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...