FDPF3860T Fairchild Semiconductor, FDPF3860T Datasheet - Page 4

• Manufacturer Part Number: FDPF3860T
• Description: MOSFET N-CH 100V 20A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDPF3860T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38.2 mOhm @ 5.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 33.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0382 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 33800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDPF3860T Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
100
200
0.1
1.2
1.1
1.0
0.9
0.8
10
-100
1
0.1
Operation in This Area
is Limited by R
-50
vs. Temperature
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
1
0
DS(on)
0.01
0.1
*Notes:
1. T
2. T
3. Single Pulse
1
5
10
50
0.05
0.02
0.5
0.2
Single pulse
0.1
0.01
-5
C
J
= 150
= 25
10
o
o
C
100
C
10
Figure 11. Transient Thermal Response Curve
-4
*Notes:
10ms
100
1. V
2. I
[
o
1ms
DC
C
D
150
µ
]
GS
s
= 250
10
= 0V
100
10
-3
µ
µ
A
s
200
Rectangular Pulse Duration [sec]
200
10
(Continued)
-2
10
-1
4
25
20
15
10
5
0
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-100
10
0
*Notes:
50
P
1. Z
2. Duty Factor, D= t
3. T
-50
DM
T
θ
JM
JC
10
J
vs. Temperature
, Junction Temperature
T
(t) = 3.7
- T
vs. Case Temperature
1
C
, Case Temperature [
C
t
= P
0
1
75
t
2
o
DM
C/W Max.
10
* Z
2
1
50
θ
/t
JC
2
(t)
100
10
100
3
o
C]
*Notes:
[
1. V
2. I
o
C
D
150
]
GS
125
= 5.9A
= 10V
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200
150