MOSFET N-CH 500V 4.5A TO-220F

FDPF5N50FT

Manufacturer Part NumberFDPF5N50FT
DescriptionMOSFET N-CH 500V 4.5A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF5N50FT datasheet
 


Specifications of FDPF5N50FT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.55 Ohm @ 2.25A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C4.5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs8nC @ 10VInput Capacitance (ciss) @ Vds700pF @ 25V
Power - Max28WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)1.55 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current4.5 APower Dissipation28000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55Ω
Features
• R
= 1.25Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 11nC)
• Low C
( Typ. 5pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. A1
Description
= 2.25A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
December 2007
UniFET
D
G
S
FDP5N50F
FDPF5N50FT
500
±30
4.5
4.5*
2.7
2.7*
(Note 1)
18
18*
(Note 2)
233
(Note 1)
4.5
(Note 1)
8.5
(Note 3)
4.5
85
28
0.67
0.22
-55 to +150
300
FDP5N50F
FDPF5N50FT
1.4
4.5
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
switching
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF5N50FT Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP5N50F / FDPF5N50FT Rev. A1 Description = 2.25A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 4.5A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP5N50F / FDPF5N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

  • Page 3

    ... GS 1.6 1.4 1 Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss = oss = rss = C gd 750 500 250 0 0 Drain-Source Voltage [V] DS FDP5N50F / FDPF5N50FT Rev. A1 Figure 2. Transfer Characteristics *Notes: 1. 250 µ s Pulse Test 0.1 10 Figure 4. Body Diode Forward Voltage 20V GS o *Note ...

  • Page 4

    ... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP5N50F 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.003 -5 10 FDP5N50F / FDPF5N50FT Rev. A1 (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes 250 µ 0.01 75 125 175 Figure 10. Maximum Drain Current ...

  • Page 5

    ... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDPF5N50FT 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP5N50F / FDPF5N50FT Rev. A1 (Continued Rectangular Pulse Duration [sec *Notes (t) = 4.5 C/W Max. θ Duty Factor ( θ www.fairchildsemi.com ...

  • Page 6

    ... FDP5N50F / FDPF5N50FT Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP5N50F / FDPF5N50FT Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP5N50F / FDPF5N50FT Rev. A1 TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP5N50F / FDPF5N50FT Rev. A1 TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 –0.05 ±0.20 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50F / FDPF5N50FT Rev. A1 FPS™ PDP-SPM™ ® FRFET Power220 Global Power Resource SM Power247 Green FPS™ POWEREDGE Green FPS™ e-Series™ ...