FDPF5N50FT Fairchild Semiconductor, FDPF5N50FT Datasheet - Page 4

• Manufacturer Part Number: FDPF5N50FT
• Description: MOSFET N-CH 500V 4.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF5N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.55 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.55 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 28000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N50F / FDPF5N50FT Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
10
30
-75
1
1
Operation in This Area
is Limited by R
vs. Temperature
-25
- FDPF5N50FT
T
J
V
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
0.003
DS(on)
0.01
25
0.1
Figure 11. Transient Thermal Response Curve - FDP5N50F
3
1
10
0.1
0.05
0.02
0.01
*Notes:
0.5
0.2
-5
Single pulse
1. T
2. T
3. Single Pulse
DC
75
C
J
10ms
= 150
= 25
100
1ms
10
o
*Notes:
o
C
-4
C
1. V
2. I
[
o
125
100
C
D
GS
]
= 250
µ
= 0V
s
30
10
µ
A
µ
-3
Rectangular Pulse Duration [sec]
175
1000
s
(Continued)
10
-2
4
10
0.01
0.1
Figure 8. Maximum Safe Operating Area
10
-1
30
Figure 10. Maximum Drain Current
4
2
0
1
5
25
1
Operation in This Area
is Limited by R
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
10
θ
JM
0
50
JC
T
- FDP5N50F
V
C
(t) = 1.4
- T
DS
, Case Temperature
t
C
, Drain-Source Voltage [V]
1
t
= P
10
2
DS(on)
o
DM
10
75
C/W Max.
1
* Z
1
θ
/t
JC
2
(t)
*Notes:
100
1. T
2. T
3. Single Pulse
DC
10
100
10ms
2
C
J
[
o
= 150
= 25
C
1ms
]
125
o
100
C
o
C
µ
s
www.fairchildsemi.com
30
µ
1000
s
150