IRFD123PBF Vishay, IRFD123PBF Datasheet

MOSFET N-CH 100V 1.3A 4-DIP

IRFD123PBF

Manufacturer Part Number
IRFD123PBF
Description
MOSFET N-CH 100V 1.3A 4-DIP
Manufacturer
Vishay
Datasheet

Specifications of IRFD123PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 780mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
1.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.6 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
1.3A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
1.3W
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD123PBF
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90161
S10-2466-Rev. C, 25-Oct-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 9.2 A, dI/dt  110 A/μs, V
= 25 V, starting T
()
D
HVMDIP
a
S
J
G
= 25 °C, L = 22 mH, R
c
a
a
b
DD
V
GS
 V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
 175 °C.
100
4.4
7.7
16
g
= 25 , I
A
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.27
GS
AS
at 10 V
= 2.6 A (see fig. 12).
T
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRFD123PbF
SiHFD123-E3
IRFD123
SiHFD123
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
IRFD123, SiHFD123
design,
- 55 to + 175
0.0083
LIMIT
300
± 20
0.94
0.13
100
100
1.3
1.3
1.3
5.5
10
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

Related parts for IRFD123PBF

IRFD123PBF Summary of contents

Page 1

... The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on N-Channel MOSFET standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels HVMDIP IRFD123PbF SiHFD123-E3 IRFD123 SiHFD123 = 25 °C, unless otherwise noted ° ...

Page 2

... IRFD123, SiHFD123 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics, T Document Number: 90161 S10-2466-Rev. C, 25-Oct- ° ° 175 °C = 175 °C A IRFD123, SiHFD123 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFD123, SiHFD123 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° ° 175 ° 175 ° SINGLE PULSE SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 90161 S10-2466-Rev. C, 25-Oct-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 90161 S10-2466-Rev. C, 25-Oct- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Rectangular Pulse Duration (s) , Rectangular Pulse Duration ( IRFD123, SiHFD123 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...

Page 6

... IRFD123, SiHFD123 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90161. Document Number: 90161 S10-2466-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords