MOSFET N-CH 500V 9A TO-220F

FDPF10N50FT

Manufacturer Part NumberFDPF10N50FT
DescriptionMOSFET N-CH 500V 9A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF10N50FT datasheet
 


Specifications of FDPF10N50FT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs850 mOhm @ 4.5A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C9AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs24nC @ 10VInput Capacitance (ciss) @ Vds1170pF @ 25V
Power - Max42WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.85 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current9 APower Dissipation125000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.85Ω
Features
• R
= 0.71Ω ( Typ.) @ V
= 10V, I
DS(on)
GS
• Low Gate Charge ( Typ. 18nC)
• Low C
( Typ. 10pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
©2009 Fairchild Semiconductor Corporation
FDP10N50F / FDPF10N50FT Rev. A
Description
= 4.5A
These N-Channel enhancement mode power field effect transis-
D
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
January 2009
UniFET
D
G
S
FDP10N50F
FDPF10N50FT
Units
500
V
±30
V
9
9*
A
5.4
5.4*
36
36*
A
364
mJ
9
A
12.5
mJ
20
V/ns
125
42
W
o
1.0
0.33
W/
C
o
-55 to +150
C
o
300
C
Units
FDP10N50F
FDPF10N50FT
1.0
3.0
o
C/W
62.5
62.5
www.fairchildsemi.com
TM

FDPF10N50FT Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP10N50F / FDPF10N50FT Rev. A Description = 4.5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... R = 25Ω, Starting ≤ 8A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP10N50F / FDPF10N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250μA, V ...

  • Page 3

    ... GS 0.8 0 Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = oss 1500 C 1000 iss 500 C rss 0 0 Drain-Source Voltage [V] DS FDP10N50F / FDPF10N50FT Rev. A Figure 2. Transfer Characteristics 250 μ s Pulse Test 0 Figure 4. Body Diode Forward Voltage 20V GS o *Note 0.1 12 ...

  • Page 4

    ... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF10N50FT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP10N50F / FDPF10N50FT Rev. A (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes: 1 ...

  • Page 5

    ... FDP10N50F / FDPF10N50FT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP10N50F / FDPF10N50FT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions FDP10N50F / FDPF10N50FT Rev. A TO-220 7 www.fairchildsemi.com ...

  • Page 8

    ... Package Dimensions * Front/Back Side Isolation Voltage : 2700V FDP10N50F / FDPF10N50FT Rev. A TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP10N50F / FDPF10N50FT Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...