FDPF33N25T Fairchild Semiconductor, FDPF33N25T Datasheet

FDPF33N25T

Manufacturer Part Number

FDPF33N25T

Description

MOSFET N-CH 250V 33A TO-220F

Manufacturer

Fairchild Semiconductor

Series

UniFET™r

Datasheets

1.FDPF33N25T.pdf (10 pages)

2.FDPF33N25T.pdf (8 pages)

Specifications of FDPF33N25T

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

94 mOhm @ 16.5A, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

33A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

48nC @ 10V

Input Capacitance (ciss) @ Vds

2135pF @ 25V

Power - Max

37W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Transistor Polarity

N Channel

Continuous Drain Current Id

20A

Drain Source Voltage Vds

250V

On Resistance Rds(on)

94mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

0.077 Ohms

Forward Transconductance Gfs (max / Min)

26.6 S

Drain-source Breakdown Voltage

250 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

20 A

Power Dissipation

37 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDPF33N25T

Manufacturer:

FSC

Quantity:

12 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDPF33N25T

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

FDPF33N25T

Quantity:

3 000

Current page: 1 of 8
Download datasheet (839Kb)

FDPF33N25 Rev A

FDPF33N25

250V N-Channel MOSFET

Features

• 20A, 250V, R

• Low gate charge ( typical 36.8 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

Thermal Characteristics

dv/dt

DSS

GSS

Symbol

θJC

θJA

STG

rss

( typical 39 pF)

DS(on)

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Operating and Storage Temperature Range

= 0.094Ω @V

- Continuous (T

- Pulsed

- Derate above 25°C

= 10 V

Parameter

FDPF Series

TO-220F

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

(Note 2)

(Note 1)

(Note 3)

(Note 1)

Min.

FDPF33N25

-55 to +150

0.76

250

±30

918

300

9.4

4.5

Max.

1.32

62.5

UniFET

May 2006

www.fairchildsemi.com

Unit

W/°C

V/ns

Unit

°C/W

°C

Related parts for FDPF33N25T

FDPF33N25T Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FDPF33N25 Rev A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

Package Marking and Ordering Information Device Marking Device FDPF33N25 FDPF33N25 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area DC is ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FDPF33N25 Rev A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FDPF33N25 Rev A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDPF33N25 Rev A TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 7 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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