IRLD014PBF Vishay, IRLD014PBF Datasheet

MOSFET N-CH 60V 1.7A 4-DIP

IRLD014PBF

Manufacturer Part Number
IRLD014PBF
Description
MOSFET N-CH 60V 1.7A 4-DIP
Manufacturer
Vishay
Datasheets

Specifications of IRLD014PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 1A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.2 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
1.7 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
1.7A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLD014PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLD014PBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91307
S10-2465-Rev. D, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
 10 A, dI/dt  90 A/µs, V
= 25 V, starting T
()
D
HVMDIP
S
a
G
J
= 25 °C, L = 197 mH, R
c
DD
b
V
 V
GS
DS
= 5 V
G
, T
N-Channel MOSFET
J
 175 °C.
Single
8.4
2.6
6.4
60
g
= 25 , I
D
S
Power MOSFET
A
V
0.20
= 25 °C, unless otherwise noted)
GS
at 5.0 V
AS
= 1.7 A (see fig. 12).
T
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRLD014PbF
SiHLD014-E3
IRLD014
SiHLD014
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• Logic-Level Gate Drive
• R
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
DS(on)
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
IRLD014, SiHLD014
design,
GS
= 4 V and 5 V
- 55 to + 175
0.0083
LIMIT
300
± 10
490
1.7
1.2
1.3
4.5
60
14
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

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IRLD014PBF Summary of contents

Page 1

... The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on N-Channel MOSFET standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels HVMDIP IRLD014PbF SiHLD014-E3 IRLD014 SiHLD014 = 25 °C, unless otherwise noted ° ...

Page 2

... IRLD014, SiHLD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 µs PULSE WIDTH T A Fig Typical Output Characteristics µs PULSE WIDTH T A Fig Typical Output Characteristics, T Document Number: 91307 S10-2465-Rev. D, 08-Nov- ° ° 175 °C = 175 °C A IRLD014, SiHLD014 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRLD014, SiHLD014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91307 S10-2465-Rev. D, 08-Nov- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms t , Rectangular Pulse Duration ( Rectangular Pulse Duration ( IRLD014, SiHLD014 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...

Page 6

... IRLD014, SiHLD014 Vishay Siliconix Vary t to obtain p required I AS D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91307. Document Number: 91307 S10-2465-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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