MOSFET N-CH 500V 11.5A TO-220F

FDPF12N50FT

Manufacturer Part NumberFDPF12N50FT
DescriptionMOSFET N-CH 500V 11.5A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF12N50FT datasheet
 

Specifications of FDPF12N50FT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs700 mOhm @ 6A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C11.5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs30nC @ 10VInput Capacitance (ciss) @ Vds1395pF @ 25V
Power - Max42WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.7 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current11.5 APower Dissipation42000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP12N50F / FDPF12N50FT
N-Channel MOSFET
500V, 11.5A, 0.7Ω
Features
• R
= 0.59Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 21nC)
• Low C
( Typ. 11pF)
rss
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP12N50F / FDPF12N50FT Rev. A1
Description
= 6A
These N-Channel enhancement mode power field effect transis-
D
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
December 2007
UniFET
D
G
S
FDP12N50F FDPF12N50FT
500
±30
11.5
11.5*
6.9
6.9*
(Note 1)
46
46*
(Note 2)
456
(Note 1)
11.5
(Note 1)
16.5
(Note 3)
4.5
165
42
1.33
0.33
-55 to +150
300
FDP12N50F FDPF12N50FT
0.75
3.0
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF12N50FT Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP12N50F / FDPF12N50FT Rev. A1 Description = 6A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... Starting ≤ 11.5A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP12N50F / FDPF12N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = oss C rss = C gd 1500 C iss 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP12N50F / FDPF12N50FT Rev. A1 Figure 2. Transfer Characteristics 30 10 µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 20V Note : ...

  • Page 4

    ... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP12N50F 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDP12N50F / FDPF12N50FT Rev. A1 (Continued) Figure 8. Maximum Safe Operating Area 100 10 1 0.1 * Notes : µ 250 A D 0.01 100 150 200 1 o ...

  • Page 5

    ... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDPF12N50FT 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP12N50F / FDPF12N50FT Rev. A1 (Continued) * Notes : - Rectangular Pulse Duration [sec ( C/W Max. θ Duty Factor, D (t) θ www.fairchildsemi.com ...

  • Page 6

    ... FDP12N50F / FDPF12N50FT Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP12N50F / FDPF12N50FT Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP12N50F / FDPF12N50FT Rev. A1 TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 #1 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP12N50F / FDPF12N50FT Rev. A1 TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) 2.54TYP [2.54 ] ±0.20 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 –0.05 ±0.20 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP12N50F / FDPF12N50FT Rev. A1 FPS™ PDP-SPM™ ® ® FRFET Power220 ® SM Global Power Resource Power247 Green FPS™ ...