FDPF12N50FT Fairchild Semiconductor, FDPF12N50FT Datasheet - Page 4

• Manufacturer Part Number: FDPF12N50FT
• Description: MOSFET N-CH 500V 11.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF12N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1395pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50F / FDPF12N50FT Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
0.01
Figure 9. Maximum Safe Operating Area
100
0.1
1.2
1.1
1.0
0.9
0.8
10
-100
1
1
Operation in This Area
is Limited by R
-50
vs. Temperature
T
- FDPF12N50FT
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
0
DS(on)
Figure 11. Transient Thermal Response Curve - FDP12N50F
1E-3
0.01
0.1
* Notes :
1. T
2. T
3. Single Pulse
1
3
10
50
0.05
0.5
0.2
0.1
0.02
0.01
Single pulse
-5
C
J
DC
= 150
= 25
10ms
o
C
o
100
100
C
10
1ms
-4
* Notes :
100
1. V
2. I
[
o
C
D
150
µ
GS
]
20
s
= 250
µ
10
= 0V
s
-3
µ
A
1000
200
Rectangular Pulse Duration [sec]
10
(Continued)
-2
10
-1
4
0.01
100
0.1
Figure 8. Maximum Safe Operating Area
10
Figure 10. Maximum Drain Current
14
12
10
1
8
6
4
2
0
10
25
1
0
Operation in This Area
is Limited by R
* Notes :
1. Z
2. Duty Factor, D=t
3. T
P
DM
θ
JM
50
JC
10
T
V
- FDP12N50F
- T
C
(t) = 0.75
DS
1
, Case Temperature
vs. Case Temperature
C
, Drain-Source Voltage [V]
t
= P
10
1
DS(on)
t
2
DM
75
o
10
* Notes :
C/W Max.
* Z
1. T
2. T
3. Single Pulse
2
1
/t
θ
2
JC
C
J
= 150
(t)
= 25
DC
100
10
o
10ms
C
o
100
C
3
[
1ms
o
C
]
100
125
µ
s
20
µ
www.fairchildsemi.com
s
1000
150