IRF614SPBF Vishay, IRF614SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF614SPBF
• Description: MOSFET N-CH 250V 2.7A D2PAK
• Manufacturer: Vishay

Specifications of IRF614SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91026
S-82997-Rev. A, 12-Jan-09
91026_09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
91026_11
25
AS
R
10 V
G
10
0.1
10
-2
1
50
V
10
T
DS
C
-5
0.05
0.02
0.01
0 − 0.5
0.2
0.1
, Case Temperature (°C)
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
100
0.01 Ω
L
10
-4
Single Pulse
(Thermal Response)
125
150
10
+
-
t
V
-3
1
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
0.1
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
IRF614S, SiHF614S
DS
t
r
t
p
1
j
= P
P
D.U.T.
DM
DM
Vishay Siliconix
R
x Z
D
t
d(off)
t
V
1
1
thJC
/t
DS
2
t
+ T
2
t
f
V
+
C
-
10
www.vishay.com
DD
V
DD
5