MOSFET N-CH 250V 2.7A D2PAK

IRF614SPBF

Manufacturer Part NumberIRF614SPBF
DescriptionMOSFET N-CH 250V 2.7A D2PAK
ManufacturerVishay
IRF614SPBF datasheet
 

Specifications of IRF614SPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2 Ohm @ 1.6A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C2.7AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs8.2nC @ 10VInput Capacitance (ciss) @ Vds140pF @ 25V
Power - Max3.1WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Transistor PolarityN Channel
Continuous Drain Current Id2.7ADrain Source Voltage Vds250V
On Resistance Rds(on)2ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VConfigurationSingle
Resistance Drain-source Rds (on)2 OhmsDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current2.7 A
Power Dissipation3.1 WMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
T
, Case Temperature (°C)
91026_09
C
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
0 − 0.5
1
0.2
0.1
0.05
0.02
0.1
0.01
10
-2
-5
10
10
91026_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
V
DS
Vary t
to obtain
p
required I
AS
D.U.T
R
G
I
AS
10 V
0.01 Ω
t
p
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91026
S-82997-Rev. A, 12-Jan-09
125
150
Single Pulse
(Thermal Response)
-4
-3
-2
10
10
t
, Rectangular Pulse Duration (s)
1
+
V
-
DD
IRF614S, SiHF614S
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
-
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
t
t
t
d(on)
r
d(off)
f
Fig. 10b - Switching Time Waveforms
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
/t
1
2
2. Peak T
= P
x Z
+ T
j
DM
thJC
C
0.1
1
10
V
DS
t
p
V
DD
V
DS
I
AS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
DD
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