MOSFET N-CH 250V 2.7A D2PAK

IRF614SPBF

Manufacturer Part NumberIRF614SPBF
DescriptionMOSFET N-CH 250V 2.7A D2PAK
ManufacturerVishay
IRF614SPBF datasheet
 

Specifications of IRF614SPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2 Ohm @ 1.6A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C2.7AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs8.2nC @ 10VInput Capacitance (ciss) @ Vds140pF @ 25V
Power - Max3.1WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Transistor PolarityN Channel
Continuous Drain Current Id2.7ADrain Source Voltage Vds250V
On Resistance Rds(on)2ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VConfigurationSingle
Resistance Drain-source Rds (on)2 OhmsDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current2.7 A
Power Dissipation3.1 WMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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D.U.T
+
-
R
G
Driver gate drive
D.U.T. I
Reverse
recovery
current
D.U.T. V
Re-applied
voltage
Inductor current
*
V
GS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91026.
Document Number: 91026
S-82997-Rev. A, 12-Jan-09
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
• dV/dt controlled by R
G
• Driver same type as D.U.T.
• I
controlled by duty factor "D"
SD
• D.U.T. - device under test
P.W.
Period
D =
Period
P.W.
waveform
SD
Body diode forward
current
dI/dt
waveform
DS
Diode recovery
dV/dt
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
Fig. 14 - For N-Channel
IRF614S, SiHF614S
Vishay Siliconix
+
+
V
DD
-
V
= 10 V*
GS
V
DD
I
SD
www.vishay.com
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