IRFBC30ALPBF Vishay, IRFBC30ALPBF Datasheet
IRFBC30ALPBF
Specifications of IRFBC30ALPBF
Related parts for IRFBC30ALPBF
IRFBC30ALPBF Summary of contents
Page 1
... 100 ° °C C for 3.6 A (see fig. 12). AS 150 ° Vishay Siliconix Results in Simple Drive g Specified oss PAK (TO-263) I PAK (TO-262 SiHFBC30ASTRR-GE3 SiHFBC30AL-GE3 a IRFBC30ASTRRPbF IRFBC30ALPbF a SiHFBC30ASTR-E3 SiHFBC30AL-E3 a IRFBC30ASTRR IRFBC30AL a SiHFBC30ASTR SiHFBC30AL SYMBOL LIMIT V 600 DS V ± 3 2 0.69 E 290 AS I 3.6 ...
Page 2
... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... T = 150 C 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics Document Number: 91109 S10-2433-Rev. B, 25-Oct-10 4.5V ° 100 4.5V ° 100 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix 100 10 ° 150 ° 0 50V DS 20µs PULSE WIDTH 0.01 4.0 5.0 6.0 7 Gate-to-Source Voltage (V) GS Fig ...
Page 4
... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 3. 480V 300V 120V FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 SHORTED ...
Page 5
... DS R D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91109 S10-2433-Rev. B, 25-Oct-10 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
Page 6
... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix 400 300 200 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 740 I D TOP 1.6A 2.3A 720 BOTTOM 3.6A 700 680 660 ...
Page 7
... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91109. Document Number: 91109 S10-2433-Rev ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...