IRFBC30ALPBF Vishay, IRFBC30ALPBF Datasheet

MOSFET N-CH 600V 3.6A TO-262

IRFBC30ALPBF

Manufacturer Part Number
IRFBC30ALPBF
Description
MOSFET N-CH 600V 3.6A TO-262
Manufacturer
Vishay
Datasheets

Specifications of IRFBC30ALPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
2.2 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
2.2ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBC30ALPBF
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S10-2433-Rev. B, 25-Oct-10
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
PAK (TO-262)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
 3.6 A, dI/dt  170 A/μs, V
()
J
= 25 °C, L = 46 mH, R
a
D
G
2
a, e
PAK (TO-263)
D
S
c, e
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
a
b
DD
V
GS
g
 V
= 25 , I
= 10 V
D
SiHFBC30AS-GE3
IRFBC30ASPbF
SiHFBC30AS-E3
IRFBC30AS
SiHFBC30AS
DS
2
PAK (TO-263)
, T
G
J
Single
 150 °C.
600
N-Channel MOSFET
5.4
AS
23
11
= 3.6 A (see fig. 12).
C
= 25 °C, unless otherwise noted)
Power MOSFET
D
S
V
2.2
GS
at 10 V
D
SiHFBC30ASTRL-GE3
IRFBC30ASTRLPbF
SiHFBC30ASTL-E3
IRFBC30ASTRL
SiHFBC30ASTL
T
2
for 10 s
C
PAK (TO-263)
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
Definition
Requirement
Ruggedness
and Current
a
a
a
a
a
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
, T
P
DM
I
AR
D
SiHFBC30ASTRR-GE3
IRFBC30ASTRRPbF
SiHFBC30ASTR-E3
IRFBC30ASTRR
SiHFBC30ASTR
GS
DS
AS
AR
D
D
2
stg
Specified
PAK (TO-263)
g
Results in Simple Drive
- 55 to + 150
a
a
LIMIT
300
a
± 30
0.69
600
290
a
3.6
2.3
3.6
7.4
7.0
14
74
a
Vishay Siliconix
d
I
SiHFBC30AL-GE3
IRFBC30ALPbF
SiHFBC30AL-E3
IRFBC30AL
SiHFBC30AL
2
PAK (TO-262)
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
1

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IRFBC30ALPBF Summary of contents

Page 1

... 100 ° °C C for 3.6 A (see fig. 12). AS  150 ° Vishay Siliconix Results in Simple Drive g Specified oss PAK (TO-263) I PAK (TO-262 SiHFBC30ASTRR-GE3 SiHFBC30AL-GE3 a IRFBC30ASTRRPbF IRFBC30ALPbF a SiHFBC30ASTR-E3 SiHFBC30AL-E3 a IRFBC30ASTRR IRFBC30AL a SiHFBC30ASTR SiHFBC30AL SYMBOL LIMIT V 600 DS V ± 3 2 0.69 E 290 AS I 3.6 ...

Page 2

... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... T = 150 C 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics Document Number: 91109 S10-2433-Rev. B, 25-Oct-10 4.5V ° 100 4.5V ° 100 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix 100 10 ° 150 ° 0 50V DS 20µs PULSE WIDTH 0.01 4.0 5.0 6.0 7 Gate-to-Source Voltage (V) GS Fig ...

Page 4

... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 3. 480V 300V 120V FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 SHORTED ...

Page 5

... DS R D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91109 S10-2433-Rev. B, 25-Oct-10 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix 400 300 200 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 740 I D TOP 1.6A 2.3A 720 BOTTOM 3.6A 700 680 660 ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91109. Document Number: 91109 S10-2433-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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