IRLD024PBF Vishay, IRLD024PBF Datasheet - Page 8

MOSFET N-CH 60V 2.5A 4-DIP

IRLD024PBF

Manufacturer Part Number
IRLD024PBF
Description
MOSFET N-CH 60V 2.5A 4-DIP
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRLD024PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 5V
Input Capacitance (ciss) @ Vds
870pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.1 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
2.5 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±10V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
HexDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLD024PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLD024PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLD024PBF
Quantity:
70 000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Document Number: 91000
www.vishay.com
Revision: 11-Mar-11
1

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