SUM45N25-58-E3 Vishay, SUM45N25-58-E3 Datasheet

MOSFET N-CH 250V 45A D2PAK

SUM45N25-58-E3

Manufacturer Part Number
SUM45N25-58-E3
Description
MOSFET N-CH 250V 45A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM45N25-58-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
58 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.058 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
45 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
45A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
62mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM45N25-58-E3
SUM45N25-58-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM45N25-58-E3
Manufacturer:
INTERSIL
Quantity:
5 623
Part Number:
SUM45N25-58-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUM45N25-58-E3
0
Company:
Part Number:
SUM45N25-58-E3
Quantity:
2 500
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Guaranteed by design
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Typical Avalanche Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
V
(BR)DSS
250
Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free)
(V)
0.058 at V
0.062 at V
d
r
N-Channel 250-V (D-S) 175 °C MOSFET
DS(on)
J
a
a
G
TO-263
Top View
= 175 °C)
D
GS
GS
c
(Ω)
S
= 10 V
= 6 V
C
T
I
T
T
L = 0.1 mH
T
D
= 25 °C, unless otherwise noted
C
A
45
43
C
C
(A)
= 125 °C
= 25 °C
= 25 °C
= 25 °C
New Product
c
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• Primary Side Switch
• Plasma Display Panel Sustainer Function
V
G
DS (Avalanche)
Symbol
T
N-Channel MOSFET
J
V
V
E
I
I
P
, T
I
DM
AR
DS
GS
AR
D
D
stg
Symbol
R
R
D
S
thJA
thJC
Typ
®
Power MOSFETS
- 55 to 175
Limit
Limit
375
± 30
3.75
250
300
0.4
45
25
90
35
61
40
SUM45N25-58
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

Related parts for SUM45N25-58-E3

SUM45N25-58-E3 Summary of contents

Page 1

... DS(on) 0.058 250 0.062 TO-263 Top View Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage d Typical Avalanche Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation ...

Page 2

... SUM45N25-58 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... C 1000 rss C oss Drain-to-Source Voltage (V) DS Capacitance Document Number: 72314 S-70311-Rev. C, 12-Feb-07 New Product °C 125 ° 120 160 200 SUM45N25-58 Vishay Siliconix 100 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.10 0.08 0. 0.04 0.02 0.00 0 ...

Page 4

... SUM45N25-58 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.4 2.0 1.6 1.2 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 100 150 ° 0.1 0.00001 0.0001 0.001 t (Sec) in Avalanche Current vs. Time www.vishay.com 4 New Product 100 100 125 150 175 = 25 ° ...

Page 5

... Document Number: 72314 S-70311-Rev. C, 12-Feb-07 New Product 100 10 0.1 125 150 175 - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUM45N25-58 Vishay Siliconix Limited by r DS(on °C C Single Pulse 0 100 V - Drain-to-Source Voltage (V) DS Safe Operating Area, Case Temperature ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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