FDP150N10 Fairchild Semiconductor, FDP150N10 Datasheet

MOSFET N-CH 100V 57A TO-220

FDP150N10

Manufacturer Part Number
FDP150N10
Description
MOSFET N-CH 100V 57A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP150N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 49A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
4760pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
57 A
Power Dissipation
110000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2008 Fairchild Semiconductor Corporation
FDP150N10 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
R
D
DM
FDP150N10
N-Channel PowerTrench
100V, 57A, 15mΩ
Features
• R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
DSS
GSS
AS
D
J
L
θJC
θCS
θJA
, T
Symbol
Symbol
DS(on)
STG
= 12mΩ ( Typ.) @ V
Peak Diode Recovery dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
GS
S
= 10V, I
D
= 49A
T
C
TO-220
FDP Series
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted
= 25
MOSFET
o
C)
DS(on)
C
C
= 25
= 100
1
o
C
General Description
This
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
o
C)
o
C)
N-Channel
(Note 1)
(Note 2)
(Note 3)
G
MOSFET
S
D
is
-55 to +150
Ratings
Ratings
0.88
produced
100
±20
228
132
300
1.13
62.5
110
7.5
57
40
0.5
www.fairchildsemi.com
using
July 2008
Fairchild
Units
W/
Units
o
V/ns
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
tm

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FDP150N10 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDP150N10 Rev. A ® MOSFET General Description = 49A This N-Channel D Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 49A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP150N10 Rev unless otherwise noted C Package Reel Size TO-220 - Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss 4000 3000 C oss C iss = oss = 2000 C rss = rss 1000 0 0 Drain-Source Voltage [V] DS FDP150N10 Rev. A Figure 2. Transfer Characteristics 1000 100 10 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 500 100 20V ...

Page 4

... DC Operation in This Area is Limited by R DS(on) 1 0.1 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDP150N10 Rev. A (Continued) Figure 8. On-Resistance Variation 2.4 2.0 1.6 1.2 *Notes: 0 250uA D 0.4 100 150 200 o C] Figure 10. Maximum Drain Current µ µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDP150N10 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP150N10 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDP150N10 Rev. A TO-220 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP150N10 Rev. A FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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