MOSFET N-CH 200V 9A D2PAK

IRL630SPBF

Manufacturer Part NumberIRL630SPBF
DescriptionMOSFET N-CH 200V 9A D2PAK
ManufacturerVishay
IRL630SPBF datasheets
 


Specifications of IRL630SPBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs400 mOhm @ 5.4A, 5V
Drain To Source Voltage (vdss)200VCurrent - Continuous Drain (id) @ 25° C9A
Vgs(th) (max) @ Id2V @ 250µAGate Charge (qg) @ Vgs40nC @ 10V
Input Capacitance (ciss) @ Vds1100pF @ 25VPower - Max3.1W
Mounting TypeSurface MountPackage / CaseD²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)0.4 Ohm @ 5 VDrain-source Breakdown Voltage200 V
Gate-source Breakdown Voltage+/- 10 VContinuous Drain Current9 A
Power Dissipation3100 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTContinuous Drain Current Id9A
Drain Source Voltage Vds200VOn Resistance Rds(on)400mohm
Rds(on) Test Voltage Vgs5VThreshold Voltage Vgs Typ2V
Fall Time33 nsRise Time57 ns
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRL630SPBF
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PRODUCT SUMMARY
V
(V)
DS
R
()
V
= 5 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
2
D
PAK (TO-263)
G
G D
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Avalanche Current
a
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25V, starting T
= 25 °C, L = 4.6 mH, R
DD
J
 9.0 A, dI/dt  120 A/μs, V
 V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90390
S10-2476-Rev. B, 01-Nov-10
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
200
• Surface Mount
0.40
• Available in Tape and Reel
• Dynamic dV/dt Rating
40
• Repetitive Avalanche Rated
5.5
• Logic-Level Gate Drive
24
• R
DS(on)
• 150 °C Operating Temperature
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
2
The D
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
S
2
D
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
N-Channel MOSFET
dissipate up to 2.0 W in a typical surface mount application.
2
2
D
PAK (TO-263)
D
PAK (TO-263)
SiHL630S-GE3
SiHL630STRR-GE3
IRL630SPbF
IRL630STRRPbF
SiHL630S-E3
SiHL630STR-E3
IRL630S
IRL630STRR
SiHL630S
SiHL630STR
= 25 °C, unless otherwise noted)
C
T
= 25 °C
C
V
at 5 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 , I
= 9.0 A (see fig. 12).
g
AS
 150 °C.
, T
J
IRL630S, SiHL630S
Vishay Siliconix
Specified at V
= 4 V and 5 V
GS
device
design,
low
on-resistance
2
D
PAK (TO-263)
a
SiHL630STRL-GE3
a
IRL630STRLPbF
a
a
SiHL630STL-E3
a
a
IRL630STRL
a
a
SiHL630STL
SYMBOL
LIMIT
V
200
DS
V
± 10
GS
9.0
I
D
5.7
I
36
DM
0.59
0.025
E
250
AS
I
9.0
AR
E
7.4
AR
74
P
D
3.1
dV/dt
5.0
T
, T
- 55 to + 150
J
stg
d
300
www.vishay.com
and
a
a
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRL630SPBF Summary of contents

  • Page 1

    ... PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can N-Channel MOSFET dissipate typical surface mount application PAK (TO-263) D PAK (TO-263) SiHL630S-GE3 SiHL630STRR-GE3 IRL630SPbF IRL630STRRPbF SiHL630S-E3 SiHL630STR-E3 IRL630S IRL630STRR SiHL630S SiHL630STR = 25 °C, unless otherwise noted °C ...

  • Page 2

    ... IRL630S, SiHL630S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... Fig Typical Output Characteristics, T Document Number: 90390 S10-2476-Rev. B, 01-Nov-10 2.25V 100 = 25 °C C 2.25V 20μs PULSE WIDTH T = 150° 100 = 150 °C C IRL630S, SiHL630S Vishay Siliconix 100 150° 25° 50V DS 20μs PULSE WIDTH 0.01 2.0 2.5 3.0 3.5 4.0 V ...

  • Page 4

    ... IRL630S, SiHL630S Vishay Siliconix 2000 1MHz iss rss oss ds gd 1500 C iss 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 SHORTED ...

  • Page 5

    ... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90390 S10-2476-Rev. B, 01-Nov-10 Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRL630S, SiHL630S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

  • Page 6

    ... IRL630S, SiHL630S Vishay Siliconix Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 600 TOP 500 BOTTOM 4.0A ...

  • Page 7

    ... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90390. Document Number: 90390 S10-2476-Rev ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...