IRL630SPBF Vishay, IRL630SPBF Datasheet

MOSFET N-CH 200V 9A D2PAK

IRL630SPBF

Manufacturer Part Number
IRL630SPBF
Description
MOSFET N-CH 200V 9A D2PAK
Manufacturer
Vishay
Datasheets

Specifications of IRL630SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.4 Ohm @ 5 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
9 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Fall Time
33 ns
Rise Time
57 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRL630SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL630SPBF
Manufacturer:
PH
Quantity:
7 209
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90390
S11-1044-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 9.0 A, dI/dt  120 A/μs, V
G D
= 25V, starting T
()
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 4.6 mH, R
c
a
b
DD
V
GS
 V
e
= 5 V
DS
G
, T
D
SiHL630S-GE3
IRL630SPbF
SiHL630S-E3
N-Channel MOSFET
e
2
J
Single
PAK (TO-263)
 150 °C.
200
5.5
40
24
This document is subject to change without notice.
g
= 25 , I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.40
V
GS
AS
at 5 V
= 9.0 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• R
• 150 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
D
SiHL630STRR-GE3
IRL630STRRPbF
SiHL630STR-E3
2
Definition
PAK (TO-263) is suitable for high current applications
2
DS(on)
PAK (TO-263)
2
PAK (TO-263) is a surface mount power package
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
a
a
a
GS
design,
IRL630S, SiHL630S
= 4 V and 5 V
- 55 to + 150
D
SiHL630STRL-GE3
IRL630STRLPbF
SiHL630STL-E3
LIMIT
0.025
300
± 10
0.59
200
250
9.0
5.7
9.0
7.4
3.1
5.0
2
36
74
low
PAK (TO-263)
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
a
a
a
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRL630SPBF Summary of contents

Page 1

... Configuration 2 D PAK (TO-263 N-Channel MOSFET ORDERING INFORMATION Package D Lead (Pb)-free and Halogen-free SiHL630S-GE3 IRL630SPbF Lead (Pb)-free SiHL630S-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor e Linear Derating Factor (PCB Mount) ...

Page 2

... IRL630S, SiHL630S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Transfer Characteristics C 2.5 2.0 1.5 1.0 2.25V 0.5 0 100 -60 -40 -20 = 150 °C Fig Normalized On-Resistance vs. Temperature C This document is subject to change without notice. IRL630S, SiHL630S Vishay Siliconix T = 150° 25° 50V DS 20μs PULSE WIDTH 2.5 3.0 3.5 4.0 4 Gate-to-Source Voltage ( ...

Page 4

... IRL630S, SiHL630S Vishay Siliconix 2000 1MHz iss rss oss ds gd 1500 C iss 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. 160V 100V 40V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 This document is subject to change without notice. IRL630S, SiHL630S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRL630S, SiHL630S Vishay Siliconix Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90390. ...

Page 8

... E 0.020 0.039 E1 0.020 0.035 0.045 0.070 H 0.045 0.068 0.015 0.029 L1 0.015 0.023 L2 0.045 0.065 L3 0.330 0.380 L4 Package Information Vishay Siliconix H Gauge plane 0° to 8° B Seating plane Detail “A” Rotated 90° CW scale 8 View MILLIMETERS MIN. MAX. MIN. 6.86 - ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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