IRLR110 Vishay, IRLR110 Datasheet - Page 2

• Manufacturer Part Number: IRLR110
• Description: MOSFET N-CH 100V 4.3A DPAK
• Manufacturer: Vishay

Specifications of IRLR110

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR110

IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
GS
V
R
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
g
= 5.0 V
= 4.0 V
= 5.0 V
Reference to 25 °C, I
J
= 12 Ω, R
MIN.
= 25 °C, I
= 80 V, V
V
-
-
-
V
V
V
f = 1.0 MHz, see fig. 5
V
DS
TEST CONDITIONS
DS
GS
DD
DS
c
= V
F
= 100 V, V
= 0 V, I
= 50 V, I
V
= 50 V, I
= 5.6 A, dI/dt = 100 A/μs
V
V
GS
D
GS
DS
S
GS
GS
I
= 8.4 Ω, see fig. 10
D
, I
=4.3 A, V
= ± 10 V
= 25 V,
= 0 V, T
= 0 V,
= 5.6 A, V
see fig. 6 and 13
D
D
= - 250 μA
D
D
= 250 μA
I
I
GS
D
D
= 5.6 A,
= 2.6 A
= 2.6 A
= 2.2 A
D
TYP.
= 0 V
J
GS
= 1 mA
-
-
-
= 125 °C
DS
G
G
= 0 V
= 80 V,
b
b
b
D
S
b
b
D
S
b
MIN.
100
1.0
2.3
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
5.0
50
S10-1139-Rev. C, 17-May-10
Document Number: 91323
TYP.
0.12
0.50
250
100
9.3
4.5
7.5
80
15
47
16
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
0.54
0.76
0.65
250
130
2.0
6.1
2.0
3.3
4.3
2.5
S
25
17
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V