MOSFET N-CH 100V 7.7A DPAK

IRLR120

Manufacturer Part NumberIRLR120
DescriptionMOSFET N-CH 100V 7.7A DPAK
ManufacturerVishay
IRLR120 datasheet
 


Specifications of IRLR120

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs270 mOhm @ 4.6A, 5VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C7.7AVgs(th) (max) @ Id2V @ 250µA
Gate Charge (qg) @ Vgs12nC @ 5VInput Capacitance (ciss) @ Vds490pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Transistor PolarityN Channel
Continuous Drain Current Id7.7ADrain Source Voltage Vds100V
On Resistance Rds(on)100mohmRds(on) Test Voltage Vgs5V
Threshold Voltage Vgs Typ2VConfigurationSingle
Resistance Drain-source Rds (on)0.27 OhmsDrain-source Breakdown Voltage100 V
Gate-source Breakdown Voltage+/- 10 VContinuous Drain Current7.7 A
Power Dissipation2.5 WMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTFall Time27 ns
Minimum Operating Temperature- 55 CRise Time64 ns
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther names*IRLR120
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (3Mb)Embed
Next
PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 5.0 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
G
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHLR120-GE3
IRLR120PbF
Lead (Pb)-free
SiHLR120-E3
IRLR120
SnPb
SiHLR120
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting T
= 25 °C, L = 5.3 mH, R
DD
J
≤ 9.2 A, dI/dt ≤ 110 A/μs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91324
S10-1139-Rev. C, 17-May-10
IRLR120, IRLU120, SiHLR120, SiHLU120
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
100
Definition
• Dynamic dV/dt Rating
0.27
• Repetitive Avalanche Rated
12
• Surface Mount (IRLR120, SiHLR120)
3.0
• Straight Lead (IRLU120, SiHLU120)
7.1
• Available in Tape and Reel
Single
• Logic-Level Gate Drive
D
• R
DS(on)
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
S
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
N-Channel MOSFET
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DPAK (TO-252)
DPAK (TO-252)
SiHLR120TRL-GE3
SiHLR120TR-GE3
a
IRLR120TRLPbF
IRLR120TRPbF
a
SiHLR120TL-E3
SiHLR120T-E3
a
IRLR120TRL
IRLR120TR
a
SiHLR120TL
SiHLR120T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 5.0 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= 7.7 A (see fig. 12).
g
AS
≤ 150 °C.
, T
J
Vishay Siliconix
Specified at V
= 4 V and 5 V
GS
device
design,
low
on-resistance
DPAK (TO-252)
IPAK (TO-251)
SiHLR120TRR-GE3
SiHLU120-GE3
a
a
IRLR120TRRPbF
IRLU120PbF
a
a
SiHLR120TR-E3
SiHLU120-E3
a
-
-
a
-
-
SYMBOL
LIMIT
V
100
DS
V
± 10
GS
7.7
I
D
4.9
I
31
DM
0.33
0.020
E
210
AS
I
7.7
AR
E
4.2
AR
42
P
D
2.5
dV/dt
5.5
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRLR120 Summary of contents

  • Page 1

    ... Power MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 100 Definition • Dynamic dV/dt Rating 0.27 • Repetitive Avalanche Rated 12 • Surface Mount (IRLR120, SiHLR120) 3.0 • Straight Lead (IRLU120, SiHLU120) 7.1 • Available in Tape and Reel Single • Logic-Level Gate Drive D • R DS(on) • ...

  • Page 2

    ... IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91324 S10-1139-Rev. C, 17-May-10 IRLR120, IRLU120, SiHLR120, SiHLU120 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91324 S10-1139-Rev. C, 17-May-10 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91324 S10-1139-Rev. C, 17-May-10 IRLR120, IRLU120, SiHLR120, SiHLU120 5.0 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

  • Page 6

    ... IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Vary t to obtain p required I AS D.U 5.0 V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

  • Page 7

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91324. Document Number: 91324 S10-1139-Rev. C, 17-May-10 IRLR120, IRLU120, SiHLR120, SiHLU120 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...