MOSFET N-CH 250V 3.8A DPAK

IRFR224

Manufacturer Part NumberIRFR224
DescriptionMOSFET N-CH 250V 3.8A DPAK
ManufacturerVishay
IRFR224 datasheet
 

Specifications of IRFR224

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.1 Ohm @ 2.3A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C3.8AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs14nC @ 10VInput Capacitance (ciss) @ Vds260pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)1.1 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current3.8 APower Dissipation2.5 W
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFR224  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (843Kb)Embed
Next
PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
G
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR224PbF
Lead (Pb)-free
SiHFR224-E3
IRFR224
SnPb
SiHFR224
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V; starting T
= 25 °C, L = 14 mH, R
DD
J
≤ 3.8 A, dI/dt ≤ 90 A/µs, V
≤ V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91271
S09-0059-Rev. A, 02-Feb-09
IRFR224, IRFU224, SiHFR224, SiHFU224
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
250
• Repetitive Avalanche Rated
1.1
• Surface Mount (IRFR224, SiHFR224)
14
• Straight Lead (IRFU224, SiHFU224)
• Available in Tape and Reel
2.7
• Fast Switching
7.8
• Ease of Paralleling
Single
• Lead (Pb)-free Available
D
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave solderig techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
S
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
N-Channel MOSFET
DPAK (TO-252)
a
IRFR224TRPbF
a
SiHFR224T-E3
a
IRFR224TR
a
SiHFR224T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= 3.8 A (see fig. 12).
G
AS
≤ 150 °C.
J
Vishay Siliconix
device
design,
low
on-resistance
DPAK (TO-252)
IPAK (TO-251)
a
IRFR224TRLPbF
IRFU224PbF
a
SiHFR224TL-E3
SiHFU224-E3
a
IRFR224TRL
IRFU224
a
SiHFR224TL
SiHFU224
SYMBOL
LIMIT
V
250
DS
V
± 20
GS
3.8
I
D
2.4
I
15
DM
0.33
0.020
E
130
AS
I
3.8
AR
E
4.2
AR
42
P
D
2.5
dV/dt
4.8
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRFR224 Summary of contents

  • Page 1

    ... S09-0059-Rev. A, 02-Feb-09 IRFR224, IRFU224, SiHFR224, SiHFU224 Power MOSFET FEATURES • Dynamic dV/dt Rating 250 • Repetitive Avalanche Rated 1.1 • Surface Mount (IRFR224, SiHFR224) 14 • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel 2.7 • Fast Switching 7.8 • Ease of Paralleling Single • ...

  • Page 2

    ... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Ambient Maximum Junction-to-Case Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91271 S09-0059-Rev. A, 02-Feb-09 IRFR224, IRFU224, SiHFR224, SiHFU224 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91271 S09-0059-Rev. A, 02-Feb-09 ...

  • Page 5

    ... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91271 S09-0059-Rev. A, 02-Feb-09 IRFR224, IRFU224, SiHFR224, SiHFU224 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

  • Page 6

    ... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91271 S09-0059-Rev ...

  • Page 7

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91271. Document Number: 91271 S09-0059-Rev. A, 02-Feb-09 IRFR224, IRFU224, SiHFR224, SiHFU224 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...