IRFL014 Vishay, IRFL014 Datasheet

MOSFET N-CH 60V 2.7A SOT223

IRFL014

Manufacturer Part Number
IRFL014
Description
MOSFET N-CH 60V 2.7A SOT223
Manufacturer
Vishay
Datasheet

Specifications of IRFL014

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 1.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
19 ns
Minimum Operating Temperature
- 55 C
Rise Time
50 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFL014

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91191
S-81369-Rev. A, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 10 A, dI/dt ≤ 90 A/µs, V
= 25 V, starting T
(Ω)
SOT-223
a
J
= 25 °C, L = 16 mH, R
c
DD
b
V
≤ V
GS
e
DS
= 10 V
G
, T
J
N-Channel MOSFET
e
≤ 150 °C.
Single
3.1
5.8
60
11
G
SOT-223
IRFL014PbF
SiHFL014-E3
IRFL014
SiHFL014
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.20
GS
AS
at 10 V
= 2.7 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
SOT-223
IRFL014TRPbF
SiHFL014T-E3
IRFL014TR
SiHFL014T
design,
IRFL014, SiHFL014
- 55 to + 150
a
a
LIMIT
0.025
0.017
300
± 20
100
a
2.7
1.7
3.1
2.0
4.5
60
22
low
a
d
Vishay Siliconix
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

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IRFL014 Summary of contents

Page 1

... SOT-223 IRFL014PbF SiHFL014-E3 IRFL014 SiHFL014 = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 2.7 A (see fig. 12 ≤ 150 °C. J IRFL014, SiHFL014 Vishay Siliconix device design, low on-resistance SOT-223 a IRFL014TRPbF a SiHFL014T-E3 a IRFL014TR a SiHFL014T SYMBOL LIMIT ± 2 1 0.025 ...

Page 2

... IRFL014, SiHFL014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91191 S-81369-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFL014, SiHFL014 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFL014, SiHFL014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91191 S-81369-Rev. A, 07-Jul-08 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91191 S-81369-Rev. A, 07-Jul-08 IRFL014, SiHFL014 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRFL014, SiHFL014 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFL014, SiHFL014 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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