MOSFET N-CH 60V 14A DPAK

IRLR024

Manufacturer Part NumberIRLR024
DescriptionMOSFET N-CH 60V 14A DPAK
ManufacturerVishay
IRLR024 datasheet
 


Specifications of IRLR024

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs100 mOhm @ 8.4A, 5VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C14AVgs(th) (max) @ Id2V @ 250µA
Gate Charge (qg) @ Vgs18nC @ 5VInput Capacitance (ciss) @ Vds870pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRLR024  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 5.0 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
G
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
IRLR024PbF
Lead (Pb)-free
SiHLR024-E3
IRLR024
SnPb
SiHLR024
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting T
= 25 °C, L = 541 µH, R
DD
J
≤ 17 A, dI/dt ≤ 140 A/µs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91322
S-82993-Rev. B, 19-Jan-09
IRLR024, IRLU024, SiHLR024, SiHLU024
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
60
• Surface Mount (IRLR024/SiHLR024)
0.10
• Straight Lead (IRLU024/SiHLU024)
18
• Available in Tape and Reel
4.5
• Logic-Level Gate Drive
12
Single
• R
DS(on)
• Fast Switching
D
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
S
phase, infrared, or wave soldering techniques. The straight
N-Channel MOSFET
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DPAK (TO-252)
IRLR024TRPbF
SiHLR024T-E3
IRLR024TR
SiHLR024T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 5.0 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= 14 A (see fig. 12).
G
AS
≤ 150 °C.
, T
J
Vishay Siliconix
Specified at V
= 4 V and 5 V
GS
device
design,
low
on-resistance
IPAK (TO-251)
a
IRLU024PbF
a
SiHLU024-E3
a
IRLU024
a
SiHLU024
SYMBOL
LIMIT
V
60
DS
V
± 10
GS
14
I
D
9.2
I
56
DM
0.33
0.020
E
91
AS
42
P
D
2.5
dV/dt
4.5
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
W
V/ns
°C
1

IRLR024 Summary of contents

  • Page 1

    ... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91322 S-82993-Rev. B, 19-Jan-09 IRLR024, IRLU024, SiHLR024, SiHLU024 Power MOSFET FEATURES • Dynamic dV/dt Rating 60 • Surface Mount (IRLR024/SiHLR024) 0.10 • Straight Lead (IRLU024/SiHLU024) 18 • Available in Tape and Reel 4.5 • Logic-Level Gate Drive 12 Single • ...

  • Page 2

    ... IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91322 S-82993-Rev. B, 19-Jan-09 IRLR024, IRLU024, SiHLR024, SiHLU024 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91322 S-82993-Rev. B, 19-Jan-09 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91322 S-82993-Rev. B, 19-Jan-09 IRLR024, IRLU024, SiHLR024, SiHLU024 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

  • Page 6

    ... IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

  • Page 7

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91322. Document Number: 91322 S-82993-Rev. B, 19-Jan-09 IRLR024, IRLU024, SiHLR024, SiHLU024 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...