MOSFET N-CH 250V 50A TO-220

FDP2710

Manufacturer Part NumberFDP2710
DescriptionMOSFET N-CH 250V 50A TO-220
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDP2710 datasheet
 

Specifications of FDP2710

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs42.5 mOhm @ 25A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C50AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs101nC @ 10VInput Capacitance (ciss) @ Vds7280pF @ 25V
Power - Max260WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.042 Ohm @ 10 V
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current50 APower Dissipation260000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP2710
250V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• PDP application
G
D
S
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source voltage
GS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Junction-to-Ambient
θJA
©2010 Fairchild Semiconductor Corporation
FDP2710 Rev. A1
Description
• 50A, 250V, R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
TO-220
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
August 2010
= 36.3mΩ @V
= 10 V
DS(on)
GS
D
G
S
Ratings
Unit
250
V
± 30
V
50
A
31.3
A
A
See Figure 9
145
mJ
4.5
V/ns
260
W
2.1
W/°C
°C
-55 to +150
°C
300
Min
Max
Unit
°C/W
--
0.48
°C/W
--
62.5
www.fairchildsemi.com
DS(on)

FDP2710 Summary of contents

  • Page 1

    ... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2010 Fairchild Semiconductor Corporation FDP2710 Rev. A1 Description • 50A, 250V, R • Fast switching speed • Low gate charge • High performance trench technology for extremely low R • High power and current handling capability • ...

  • Page 2

    ... DD G ≤ 50A, di/dt ≤ 100A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP2710 Rev. A1 Package Reel Size TO-220 - T = 25°C unless otherwise noted C Conditions 250μA, T ...

  • Page 3

    ... C = shorted iss oss rss gd 6000 C iss C oss 3000 C rss Drain-Source Voltage [V] DS FDP2710 Rev. A1 Figure 2. Transfer Characteristics 250 100 10 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 150 100 10 = 20V Note : 100 125 150 Figure 6. Gate Charge Characteristics Note: 1 ...

  • Page 4

    ... Operation in This Area is Limited by R DS(on) * Notes : 0 150 Single Pulse 0. Drain-Source Voltage 0 0.2 0.1 0.05 0. 0.01 Single pulse - FDP2710 Rev. A1 (Continued) Figure 8. On-Resistance Variation 2 Notes : 250 μ -100 100 150 200 Figure 10. Maximum Drain Current 60 50 100 μ 1ms 100 ...

  • Page 5

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP2710 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP2710 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions FDP2710 Rev. A1 TO-220 7 www.fairchildsemi.com ...

  • Page 8

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP2710 Rev. A1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...