FDP2710 Fairchild Semiconductor, FDP2710 Datasheet - Page 3

• Manufacturer Part Number: FDP2710
• Description: MOSFET N-CH 250V 50A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP2710

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 101nC @ 10V
• Input Capacitance (ciss) @ Vds: 7280pF @ 25V
• Power - Max: 260W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 50 A
• Power Dissipation: 260000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP2710 Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
9000
6000
3000
100
500
0.07
0.06
0.05
0.04
0.03
0.02
10
1
0.1
0
10
0
V
Bottom : 5.5 V
-1
GS
Drain Current and Gate Voltage
C
C
C
Top : 15.0 V
iss
oss
rss
= C
= C
= C
25
V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
gs
DS
V
gd
ds
DS
, Drain-Source Voltage [V]
+ C
+ C
V
,Drain-Source Voltage[V]
C
I
GS
D
gd
C
rss
gd
, Drain Current [A]
C
50
iss
= 10V
oss
(
C
10
ds
0
1
= shorted
75
* Notes :
V
1. 250
2. T
GS
* Note : T
)
= 20V
C
100
= 25
μ
s Pulse Test
o
* Note:
C
1. V
2. f = 1MHz
10
J
125
= 25
1
GS
10
= 0V
o
C
150
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
250
100
100
150
10
10
10
1
1
0.2
8
6
4
2
0
4
0
* Notes :
150
Variation vs. Source Current
1. V
2. 250
o
10
V
C
T
GS
A
SD
μ
=0V
0.4
= 150
s Pulse Test
, Body Diode Forward Voltage [V]
V
GS
20
Q
and Temperatue
g
o
,Gate-Source Voltage[V]
, Total Gate Charge [nC]
C
6
30
0.6
V
V
V
25
DS
DS
DS
o
= 50V
= 125V
= 200V
-55
C
40
o
* Notes :
C
0.8
1. V
2. 250
50
T
* Note : I
DS
8
A
μ
= 25
= 20V
s Pulse Test
60
o
1.0
C
D
= 50A
70
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1.2
10
80