IRFR320 Vishay, IRFR320 Datasheet

MOSFET N-CH 400V 3.1A DPAK

IRFR320

Manufacturer Part Number
IRFR320
Description
MOSFET N-CH 400V 3.1A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR320

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR320

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91273
S-82991-Rev. B, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(TO-252)
D
(Max.) (nC)
(nC)
DPAK
(nC)
(V)
≤ 3.1 A, dI/dt ≤ 65 A/µs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
DPAK (TO-252)
IRFR320PbF
SiHFR320-E3
IRFR320
SiHFR320
= 25 °C, L = 29 mH, R
G
c
a
D S
a
DD
b
V
≤ V
GS
e
= 10 V
DS
, T
G
J
e
N-Channel MOSFET
Single
≤ 150 °C.
400
3.3
20
11
G
DPAK (TO-252)
IRFR320TRLPbF
SiHFR320TL-E3
IRFR320TRL
SiHFR320TL
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
IRFR320, IRFU320, SiHFR320, SiHFU320
1.8
GS
AS
at 10 V
= 3.1 A (see fig. 12).
a
a
T
T
A
for 10 s
C
a
a
= 25 °C
= 25 °C
T
T
C
C
DPAK (TO-252)
IRFR320TRPbF
SiHFR320T-E3
IRFR320TR
SiHFR320T
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR320,SiHFR320)
• Straight Lead (IRFU320,SiHFU320)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
SYMBOL
T
a
a
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
DPAK (TO-252)
IRFR320TRRPbF
SiHFR320TR-E3
IRFR320TRR
SiHFR320TR
design,
- 55 to + 150
a
a
LIMIT
0.020
260
± 20
0.33
400
160
3.1
2.0
3.1
4.2
2.5
4.0
12
42
low
a
a
Vishay Siliconix
d
on-resistance
IPAK (TO-251)
IRFU320PbF
SiHFU320-E3
IRFU320
SiHFU320
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFR320 Summary of contents

Page 1

... Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 Power MOSFET FEATURES • Dynamic dV/dt Rating 400 • Repetitive Avalanche Rated 1.8 • Surface Mount (IRFR320,SiHFR320) 20 • Straight Lead (IRFU320,SiHFU320) 3.3 • Available in Tape and Reel 11 • Fast Switching Single • Ease of Paralleling D • ...

Page 2

... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 = 25 °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91273 S-82991-Rev. B, 12-Jan-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91273. Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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