MOSFET N-CH 400V 3.1A DPAK

IRFR320

Manufacturer Part NumberIRFR320
DescriptionMOSFET N-CH 400V 3.1A DPAK
ManufacturerVishay
IRFR320 datasheet
 


Specifications of IRFR320

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.8 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)400V
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs20nC @ 10VInput Capacitance (ciss) @ Vds350pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFR320  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR320PbF
Lead (Pb)-free
SiHFR320-E3
IRFR320
SnPb
SiHFR320
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 29 mH, R
DD
J
≤ 3.1 A, dI/dt ≤ 65 A/µs, V
≤ V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91273
S-82991-Rev. B, 12-Jan-09
IRFR320, IRFU320, SiHFR320, SiHFU320
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
400
• Repetitive Avalanche Rated
1.8
• Surface Mount (IRFR320,SiHFR320)
20
• Straight Lead (IRFU320,SiHFU320)
3.3
• Available in Tape and Reel
11
• Fast Switching
Single
• Ease of Paralleling
D
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
G
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
S
mounting applications. Power dissipation levels up to 1.5 W
N-Channel MOSFET
are possible in typical surface mount applications.
DPAK (TO-252)
DPAK (TO-252)
a
IRFR320TRLPbF
IRFR320TRPbF
a
SiHFR320TL-E3
SiHFR320T-E3
a
IRFR320TRL
IRFR320TR
a
SiHFR320TL
SiHFR320T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= 3.1 A (see fig. 12).
G
AS
≤ 150 °C.
J
Vishay Siliconix
device
design,
low
on-resistance
DPAK (TO-252)
IPAK (TO-251)
a
a
IRFR320TRRPbF
IRFU320PbF
a
a
SiHFR320TR-E3
SiHFU320-E3
a
a
IRFR320TRR
IRFU320
a
a
SiHFR320TR
SiHFU320
SYMBOL
LIMIT
V
400
DS
V
± 20
GS
3.1
I
D
2.0
I
12
DM
0.33
0.020
E
160
AS
I
3.1
AR
E
4.2
AR
42
P
D
2.5
dV/dt
4.0
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRFR320 Summary of contents

  • Page 1

    ... Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 Power MOSFET FEATURES • Dynamic dV/dt Rating 400 • Repetitive Avalanche Rated 1.8 • Surface Mount (IRFR320,SiHFR320) 20 • Straight Lead (IRFU320,SiHFU320) 3.3 • Available in Tape and Reel 11 • Fast Switching Single • Ease of Paralleling D • ...

  • Page 2

    ... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 = 25 °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91273 S-82991-Rev. B, 12-Jan-09 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

  • Page 6

    ... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

  • Page 7

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91273. Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...