2SK3892 Panasonic - SSG, 2SK3892 Datasheet

2SK3892

Manufacturer Part Number

2SK3892

Description

MOSFET N-CH 200V 22A TO-220D

Manufacturer

Panasonic - SSG

Datasheet

1.2SK3892.pdf (3 pages)

Specifications of 2SK3892

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

62 mOhm @ 11A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

22A

Vgs(th) (max) @ Id

4.5V @ 1mA

Input Capacitance (ciss) @ Vds

3177pF @ 25V

Power - Max

40W

Mounting Type

Through Hole

Package / Case

TO-220D

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

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Power MOSFETs

2SK3892

Silicon N-channel power MOSFET

For high-speed switching

 Features

 Absolute Maximum Ratings T

Note) * : L = 2.67 mH, I

 Electrical Characteristics T

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: November 2005

 Low ON resistance R

 Avalanche energy capability guaranteed

 High-speed switching

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Peak drain current

Avalanche energy capability

Drain power dissipation

Junction temperature

Storage temperature

Drain-source surrender voltage

Drain-source cutoff current

Gate-source cutoff current

Gate threshold voltage

Drain-source ON resistance

Forward transfer admittance

Short-circuit input capacitance

(Common source)

Short-circuit output capacitance

(Common source)

Reverse transfer capacitance

(Common source)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Parameter

= 22 A, V

= 25°C

= 50 V, 1 pulse

This product complies with the RoHS Directive (EU 2002/95/EC).

= 25°C±3°C

= 25°C

Symbol

EAS

Symbol

DSS

GSS

stg

Y

DS(on)

d(off)

d(on)

DSS

GSS

DSS

oss

iss

rss



–55 to +150

Rating

200

±30

986

150

2.0

= 1 mA, V

= 9.1 Ω, V

= 160 V, V

= ±30 V, V

= 10 V, I

= 25 V, V

= 100 V, I

SJG00043AED

Conditions

Unit

= 1.0 mA

= 11.0 A

°C

= 0

= 11.0 A

= 10 V

= 0, f = 1 MHz

= 0

Marking Symbol: K3892

Internal Connection

1: Base

2: Collector

3: Emitter

Min

200

2.5

9.9

±0.3

2.54

5.08

0.8

1.4

1.6

3 177

±0.1

Typ

456

194

±0.2

±0.30

±0.50

±0.2

φ 3.2

±0.1

TO-220D-A1 Package

Max

±1.0

4.5

4.6

±0.2

0.55

Unit: mm

2.9

2.6

±0.15

±0.2

±0.1

Unit

mΩ

µA

Related parts for 2SK3892

2SK3892 Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For high-speed switching  Features  Low ON resistance R on  Avalanche energy capability guaranteed  High-speed switching  Absolute Maximum Ratings T = 25°C C Parameter Drain-source surrender voltage ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3892  Electrical Characteristics (continued) T Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. ...

Page 3

This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...

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