FDP8440 Fairchild Semiconductor, FDP8440 Datasheet - Page 2

• Manufacturer Part Number: FDP8440
• Description: MOSFET N-CH 40V 100A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8440

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 450nC @ 10V
• Input Capacitance (ciss) @ Vds: 24740pF @ 25V
• Power - Max: 306W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 277 A
• Power Dissipation: 306000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8440 Rev. A6
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1: Pulse width limited by maximum junction temperature.
2: Starting T
Off Characteristics
BV
I
I
On Characteristics
V
R
Dynamic Characteristics
C
C
C
R
Q
Q
Q
Q
Q
Switching Characteristics
t
t
t
t
t
t
Drain-Source Diode Characteristics and Maximum Ratings
V
t
Q
Device Marking
Symbol
DSS
GSS
ON
d(on)
r
d(off)
f
OFF
rr
GS(th)
SD
DS(on)
iss
oss
rss
G
g(tot)
g(2)
gs
gs2
gd
RR
DSS
FDP8440
J
= 25°C, L = 1mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate to Source Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 58A, V
Parameter
FDP8440
Device
(V
GS
DD
= 10V)
= 36V, V
GS
T
C
= 10V.
= 25°C unless otherwise noted
Package
TO-220
V
V
V
V
V
V
V
V
T
V
f = 1.0MHz
V
V
V
V
V
I
I
I
I
SD
SD
SD
SD
C
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
GS
GS
DD
GS
= 175
= 80A
= 40A
= 75A, dI
= 75A, dI
= 0V
= 32V
= V
= 25V, V
= 0V, I
= ±20V
= 4.5V, I
= 10V, I
= 10V, I
= 0.5V, f = 1MHz
= 0V to 10V
= 0V to 2V
= 20V,I
= 10V, R
GS
o
C
2
, I
D
Conditions
D
D
D
D
SD
SD
= 250μA
D
GS
GEN
= 80A
= 80A
= 80A,
= 250μA
= 80A
/dt = 100A/μs
/dt = 100A/μs
Reel Size
= 0V,
= 7Ω
N/A
T
V
I
I
D
g
C
DD
= 1.0mA
= 80A
= 150
= 20V
o
C
Tape Width
Min
N/A
40
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1
18600
1840
1400
Typ
1.88
1.64
3.00
32.5
16.5
345
175
130
435
290
730
1.1
49
74
43
59
77
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24740
Max
Quantity
±100
2450
2100
1470
1.25
250
450
360
275
875
590
2.4
2.2
4.4
1.0
95
www.fairchildsemi.com
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1
3
50units
Units
mΩ
μA
μA
nA
nC
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
Ω
V
V
V
V