IRFL9014 Vishay, IRFL9014 Datasheet

MOSFET P-CH 60V 1.8A SOT223

IRFL9014

Manufacturer Part Number
IRFL9014
Description
MOSFET P-CH 60V 1.8A SOT223
Manufacturer
Vishay
Datasheet

Specifications of IRFL9014

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 1.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFL9014

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Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
DS
DS(on)
g
gs
gd
(Max.) (nC)
(nC)
(nC)
(V)
(Ω)
SOT-223
a
a
a
V
b
GS
= - 10 V
e
G
P-Channel MOSFET
Single
- 60
3.8
5.1
12
SOT-223
IRFL9014PbF
SiHFL9014-E3
IRFL9014
SiHFL9014
S
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.50
GS
at - 10 V
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
SYMBOL
V
V
E
E
I
I
device
I
DM
AR
DS
GS
AS
AR
D
IRFL9014, SiHFL9014
SOT-223
IRFL9014TRPbF
SiHFL9014T-E3
IRFL9014TR
SiHFL9014T
design,
a
a
LIMIT
0.025
0.017
± 20
- 1.8
- 1.1
- 1.8
0.31
- 60
- 14
140
low
a
a
Vishay Siliconix
on-resistance
www.vishay.com
UNIT
W/°C
RoHS*
COMPLIANT
mJ
mJ
V
A
A
Available
and
1

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IRFL9014 Summary of contents

Page 1

... Power dissipation of greater than 1. possible in a typical surface mount application. SOT-223 IRFL9014PbF SiHFL9014-E3 IRFL9014 SiHFL9014 = 25 °C, unless otherwise noted ° 100 °C C IRFL9014, SiHFL9014 Vishay Siliconix device design, low on-resistance SOT-223 a IRFL9014TRPbF a SiHFL9014T-E3 a IRFL9014TR a SiHFL9014T SYMBOL LIMIT ...

Page 2

... IRFL9014, SiHFL9014 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). ...

Page 3

... A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91195_03 = 25 ° µs Pulse Width T = 150 ° 91195_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFL9014, SiHFL9014 Vishay Siliconix MIN. TYP. MAX 1 5 160 b - 0.096 0.19 and ° ...

Page 4

... IRFL9014, SiHFL9014 Vishay Siliconix 600 MHz iss 500 rss oss 400 300 200 100 Drain-to-Source Voltage ( 91195_05 Fig Typical Capacitance vs. Drain-to-Source Voltage -6 - Total Gate Charge (nC) 91195_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 10 91195_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91195 S-81412-Rev. A, 07-Jul-08 100 125 150 Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 IRFL9014, SiHFL9014 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFL9014, SiHFL9014 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 400 300 200 100 100 Starting T , Junction Temperature (°C) 91195_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

Page 7

... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig.14 - For P-Channel IRFL9014, SiHFL9014 Vishay Siliconix + + P. www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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