MOSFET N-CH 400V 11A TO-247AC

IRFP340PBF

Manufacturer Part NumberIRFP340PBF
DescriptionMOSFET N-CH 400V 11A TO-247AC
ManufacturerVishay
IRFP340PBF datasheets
 


Specifications of IRFP340PBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs550 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)400VCurrent - Continuous Drain (id) @ 25° C11A
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs62nC @ 10V
Input Capacitance (ciss) @ Vds1400pF @ 25VPower - Max150W
Mounting TypeThrough HolePackage / CaseTO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)0.55 Ohm @ 10 VDrain-source Breakdown Voltage400 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current11 A
Power Dissipation150000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleContinuous Drain Current Id11A
Drain Source Voltage Vds400VOn Resistance Rds(on)550mohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFP340PBF
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-247AC
G
D
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 6.9 mH, R
DD
J
≤ 11 A, dI/dt ≤ 120 A/μs, V
≤ V
c. I
, T
SD
DD
DS
J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91222
S11-0448-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
400
• Repetitive Avalanche Rated
0.55
• Isolated Central Mounting Hole
62
• Fast Switching
10
• Ease of Paralleling
30
• Simple Drive Requirements
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The
TO-247AC
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
S
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
TO-247AC
IRFP340PbF
SiHFP340-E3
IRFP340
SiHFP340
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
dV/dt
T
J
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 11 A (see fig. 12).
g
AS
≤ 150 °C.
This datasheet is subject to change without notice.
IRFP340, SiHFP340
Vishay Siliconix
RoHS*
COMPLIANT
device
design,
low
on-resistance
package
is
preferred
LIMIT
UNIT
V
400
DS
V
V
± 20
GS
11
I
D
6.9
A
I
44
DM
1.2
W/°C
E
480
mJ
AS
I
11
A
AR
E
15
mJ
AR
P
150
W
D
4.0
V/ns
, T
- 55 to + 150
stg
°C
d
300
10
lbf · in
1.1
N · m
www.vishay.com
www.vishay.com/doc?91000
Available
and
for
1

IRFP340PBF Summary of contents

  • Page 1

    ... TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 S package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247AC IRFP340PbF SiHFP340-E3 IRFP340 SiHFP340 = 25 °C, unless otherwise noted) C SYMBOL ° ...

  • Page 2

    ... IRFP340, SiHFP340 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... Document Number: 91222 S11-0448-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFP340, SiHFP340 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

  • Page 4

    ... IRFP340, SiHFP340 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

  • Page 5

    ... Document Number: 91222 S11-0448-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFP340, SiHFP340 Vishay Siliconix D.U. Pulse width ≤ ...

  • Page 6

    ... IRFP340, SiHFP340 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

  • Page 7

    ... for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91222. ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...