IRFPC50APBF Vishay, IRFPC50APBF Datasheet

MOSFET N-CH 600V 11A TO-247AC

IRFPC50APBF

Manufacturer Part Number
IRFPC50APBF
Description
MOSFET N-CH 600V 11A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFPC50APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
580 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2100pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.58 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
7.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
180000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
11A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
580mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFPC50APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPC50APBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFPC50APBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91241
S11-0443-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
 11 A, dI/dt  126 A/μs, V
TO-247AC
()
J
= 25 °C, L = 15 mH, R
G
D
a
S
c
a
a
b
DD
V
GS
 V
g
= 25 , I
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
 150 °C.
600
AS
70
19
28
This datasheet is subject to change without notice.
= 11 A (see fig. 12).
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.58
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247AC
IRFPC50APbF
SiHFPC50A-E3
IRFPC50A
SiHFPC50A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGY
• PFC Boost
Requirement
Ruggedness
and Current
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
IRFPC50A, SiHFPC50A
Specified
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
600
920
180
7.0
1.4
4.9
1.1
11
44
11
18
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFPC50APBF Summary of contents

Page 1

... Effective C Single oss • Compliant to RoHS Directive 2002/95/EC D APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching S TYPICAL SMPS TOPOLOGY • PFC Boost TO-247AC IRFPC50APbF SiHFPC50A-E3 IRFPC50A SiHFPC50A = 25 °C, unless otherwise noted) C SYMBOL ° 100 ° ...

Page 2

... IRFPC50A, SiHFPC50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics 3 2.5 2.0 1.5 1.0 4.5V 0.5 ° 0.0 100 -60 -40 -20 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. IRFPC50A, SiHFPC50A Vishay Siliconix T = 150 C ° ° J 100V V = 50V DS 20μs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 ...

Page 4

... IRFPC50A, SiHFPC50A Vishay Siliconix 100000 1MHz iss rss oss ds gd 10000 C iss 1000 C oss 100 C 10 rss 100 V , Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 13A 480V 300V 120V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... Fig. 10a - Switching Time Test Circuit 125 150 10 % ° Fig. 10b - Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 This datasheet is subject to change without notice. IRFPC50A, SiHFPC50A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRFPC50A, SiHFPC50A Vishay Siliconix D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 2000 TOP 1600 BOTTOM 1200 800 400 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91241. ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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