MOSFET N-CH 600V 3.6A TO-220AB

IRFBC30A

Manufacturer Part NumberIRFBC30A
DescriptionMOSFET N-CH 600V 3.6A TO-220AB
ManufacturerVishay
IRFBC30A datasheet
 


Specifications of IRFBC30A

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2.2 Ohm @ 2.2A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C3.6AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs23nC @ 10VInput Capacitance (ciss) @ Vds510pF @ 25V
Power - Max74WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFBC30A  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 25 Ω, I
b. Starting T
= 25 °C, L = 41 mH, R
J
G
≤ 3.6 A, dI/dt ≤ 170 A/µs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91108
S-81243-Rev. A, 21-Jul-08
Power MOSFET
FEATURES
• Low Gate Charge Q
600
Requirement
2.2
• Improved Gate, Avalanche and Dynamic dV/dt
23
Ruggedness
5.4
• Fully Characterized Capacitance and Avalanche Voltage
11
and Current
Single
• Effective C
D
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGY
S
• Single Transistor Flyback
N-Channel MOSFET
TO-220
IRFBC30APbF
SiHFBC30A-E3
IRFBC30A
SiHFBC30A
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 3.6 A (see fig. 12).
AS
≤ 150 °C.
, T
J
IRFBC30A, SiHFBC30A
Vishay Siliconix
Results in Simple Drive
g
Specified
oss
SYMBOL
LIMIT
V
600
DS
V
± 30
GS
3.6
I
D
2.3
I
14
DM
0.69
E
290
AS
I
3.6
AR
E
7.4
AR
P
74
D
dV/dt
7.0
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1

IRFBC30A Summary of contents

  • Page 1

    ... TO-220 IRFBC30APbF SiHFBC30A-E3 IRFBC30A SiHFBC30A = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 3.6 A (see fig. 12). AS ≤ 150 ° IRFBC30A, SiHFBC30A Vishay Siliconix Results in Simple Drive g Specified oss SYMBOL LIMIT V 600 DS V ± 3 2 0.69 E 290 AS I 3.6 ...

  • Page 2

    ... IRFBC30A, SiHFBC30A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... T = 150 C J 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics Document Number: 91108 S-81243-Rev. A, 21-Jul-08 100 4.5V ° 0.01 10 100 4.5V ° 10 100 IRFBC30A, SiHFBC30A Vishay Siliconix 150 C ° ° 0 50V DS 20μs PULSE WIDTH 4.0 5.0 6.0 7.0 8 Gate-to-Source Voltage (V) GS Fig ...

  • Page 4

    ... IRFBC30A, SiHFBC30A Vishay Siliconix 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 3. 480V 300V 120V FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 SHORTED 100 1000 ...

  • Page 5

    ... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91108 S-81243-Rev. A, 21-Jul-08 125 150 ° 0.001 t , Rectangular Pulse Duration (sec Driver + - IRFBC30A, SiHFBC30A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V ...

  • Page 6

    ... IRFBC30A, SiHFBC30A Vishay Siliconix 740 720 700 680 660 640 0.0 1.0 2 Avalanche Current ( A) Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current www.vishay.com 6 700 TOP 600 BOTTOM 500 400 300 200 100 100 Starting T , Junction Temperature Fig. 12c - Maximum Avalanche Energy vs. Drain Current 3 ...

  • Page 7

    ... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFBC30A, SiHFBC30A Vishay Siliconix + + www.vishay.com 7 ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...