IRFBC30A Vishay, IRFBC30A Datasheet - Page 2

MOSFET N-CH 600V 3.6A TO-220AB

IRFBC30A

Manufacturer Part Number
IRFBC30A
Description
MOSFET N-CH 600V 3.6A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRFBC30A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBC30A

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IRFBC30A, SiHFBC30A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
R
oss
R
t
t
R
I
I
C
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
t
I
SM
t
thCS
thJA
thJC
oss
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
r
f
rr
g
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
V
J
GS
GS
R
GS
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
J
Reference to 25 °C, I
= 10 V
= 10 V
= 25 °C, I
= 480 V, V
= 0 V
= 12 Ω, R
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
oss
0.50
TEST CONDITIONS
DS
DS
DS
GS
-
-
= 300 V, I
F
= V
= 600 V, V
while V
= 50 V, I
= 0 V, I
V
V
= 3.6 A, dI/dt = 100 A/µs
V
GS
DS
S
V
D
GS
GS
V
GS
I
= 3.6 A, V
DS
D
DS
= 82 Ω, see fig. 10
= ± 30 V
= 25 V,
V
, I
= 0 V,
= 3.6 A, V
see fig. 6 and 13
= 0 V, T
DS
DS
D
= 480 V, f = 1.0 MHz
D
= 1.0 V, f = 1.0 MHz
D
= 250 µA
D
= 250 µA
= 0 V to 480 V
I
is rising from 0 to 80 % V
GS
= 2.2 A
D
= 3.6 A,
= 2.2 A
D
= 0 V
GS
= 1 mA
J
G
= 125 °C
DS
= 0 V
b
= 480 V
b
MAX.
b
b
D
S
b
1.7
62
c
-
b
MIN.
600
2.0
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
.
Document Number: 91108
S-81243-Rev. A, 21-Jul-08
TYP.
0.67
510
730
400
3.5
9.8
1.1
70
19
31
13
19
12
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
250
600
S
4.5
2.2
5.4
3.6
1.6
1.7
25
23
11
14
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
µC
nA
µA
pF
ns
ns
Ω
V
V
S
A
V

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