MOSFET N-CH 400V 23A TO-247AC

IRFP360PBF

Manufacturer Part NumberIRFP360PBF
DescriptionMOSFET N-CH 400V 23A TO-247AC
ManufacturerVishay
IRFP360PBF datasheet
 


Specifications of IRFP360PBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs200 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)400VCurrent - Continuous Drain (id) @ 25° C23A
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs210nC @ 10V
Input Capacitance (ciss) @ Vds4500pF @ 25VPower - Max280W
Mounting TypeThrough HolePackage / CaseTO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)0.2 Ohm @ 10 VDrain-source Breakdown Voltage400 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current23 A
Power Dissipation280000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleContinuous Drain Current Id23A
Drain Source Voltage Vds400VOn Resistance Rds(on)200mohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFP360PBF
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-247AC
G
D
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 4.0 mH, R
DD
J
≤ 23 A, dI/dt ≤ 170 A/μs, V
≤ V
c. I
, T
SD
DD
DS
J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90292
S11-0447-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Power MOSFET
FEATURES
• Dynamic dV/dt Rated
400
• Repetitive Avalanche Rated
0.20
• Isolated Central Mounting Hole
210
• Fast Switching
30
• Ease of Paralleling
110
• Simple Drive Requirements
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The
TO-247AC
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
S
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
TO-247AC
IRFP360PbF
SiHFP360-E3
IRFP360
SiHFP360
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
dV/dt
T
J
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 23 A (see fig. 12).
g
AS
≤ 150 °C.
This datasheet is subject to change without notice.
IRFP360, SiHFP360
Vishay Siliconix
RoHS*
COMPLIANT
device
design,
low
on-resistance
package
is
preferred
LIMIT
UNIT
V
400
DS
V
V
± 20
GS
23
I
D
14
A
I
92
DM
2.2
W/°C
E
1200
mJ
AS
I
23
A
AR
E
28
mJ
AR
P
280
W
D
4.0
V/ns
, T
- 55 to + 150
stg
°C
d
300
10
lbf · in
1.1
N · m
www.vishay.com
www.vishay.com/doc?91000
Available
and
for
1

IRFP360PBF Summary of contents

  • Page 1

    ... TO-220AB devices. The S TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC IRFP360PbF SiHFP360-E3 IRFP360 SiHFP360 = 25 °C, unless otherwise noted) C SYMBOL ° ...

  • Page 2

    ... IRFP360, SiHFP360 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... Document Number: 90292 S11-0447-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFP360, SiHFP360 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

  • Page 4

    ... IRFP360, SiHFP360 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

  • Page 5

    ... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90292 S11-0447-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFP360, SiHFP360 Vishay Siliconix D.U. Pulse width ≤ ...

  • Page 6

    ... IRFP360, SiHFP360 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

  • Page 7

    ... for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90292. ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...